Hermetic terminal for an AIMD having a pin joint in a feedthrough capacitor or circuit board

ABSTRACT

A hermetically sealed filtered feedthrough for an active implantable medical device includes a first conductive leadwire extending from a first end to a second end, the first leadwire second end extending outwardly beyond the device side of an insulator hermetically sealed to a ferrule for the feedthrough. A circuit board supporting a chip capacitor is disposed adjacent to a device side of the insulator and has a circuit board passageway. The first leadwire first end resides in the circuit board passageway. A second conductive leadwire on the device side has a second leadwire first end disposed in the circuit board passageway with a second leadwire second end extending outwardly beyond the circuit board to be connectable to AIMD internal electronics. The second leadwire first end is connected to the first leadwire first end and a capacitor internal metallization in the circuit board passageway. The circuit board further comprises a ground electrode plate that is connected to the ground termination of the chip capacitor and to the ferrule.

CROSS-REFERENCE TO RELATED APPLICATIONS

This continuation application claims priority to U.S. patent applicationSer. No. 15/844,683, filed on Dec. 18, 2017, now U.S. Pat. No.10,449,375, which claims priority to U.S. provisional application Ser.No. 62/437,781, filed on Dec. 22, 2016, the entire contents of which arefully incorporated herein by this reference.

FIELD OF THE INVENTION

The present invention generally relates to implantable medical devicesand hermetic terminal subassemblies. More particularly, the presentinvention relates a hermetic terminal having a composite conductive leadhaving pin joint in a feedthrough capacitor or circuit board.

BACKGROUND OF THE INVENTION

A wide assortment of active implantable medical devices (AIMD) arepresently known and in commercial use. Such devices include cardiacpacemakers, cardiac defibrillators, cardioverters, neurostimulators, andother devices for delivering and/or receiving electrical signals to/froma portion of the body. Sensing and/or stimulating leads extend from theassociated implantable medical device to a distal tip electrode orelectrodes in contact with body tissue.

The hermetic terminal or feedthrough of these implantable devices isconsidered critical. Hermetic terminals or feedthroughs are generallywell-known in the art for connecting electrical signals through thehousing or case of an AIMD. For example, in implantable medical devicessuch as cardiac pacemakers, implantable cardioverter defibrillators, andthe like, a hermetic terminal comprises one or more conductive pathwayswhich may include conductive terminal pins, conductive filled vias,leadwires and the like supported by an insulative structure forfeedthrough passage from the exterior to the interior of an AIMDelectromagnetic shield housing. Hermetic terminals or feedthroughs forAIMDs must be biocompatible as well as resistant to degradation underapplied bias current or voltage (biostable). Hermeticity of thefeedthrough is imparted by judicious material selection and carefullyprescribed manufacturing processing. Sustainable hermeticity of thefeedthrough over the lifetime of these implantable devices is criticalbecause the hermetic terminal intentionally isolates the internalcircuitry and components of the device (AIMD) from the externalenvironment to which the component is exposed. In particular, thehermetic terminal isolates the internal circuitry, connections, powersources and other components in the device from ingress of body fluids.Ingress of body fluids into an implantable medical device is known to bea contributing factor to device malfunction and may contribute to thecompromise or failure of electrical circuitry, connections, powersources and other components within an implantable medical device thatare necessary for consistent and reliable device therapy delivery to apatient. Furthermore, ingress of body fluids may compromise animplantable medical device's functionality which may constituteelectrical shorting, element or joint corrosion, metal migration orother such harmful consequences affecting consistent and reliable devicetherapy delivery.

In addition to concerns relative to sustained terminal or feedthroughhermeticity, other potentially compromising conditions must beaddressed, particularly when a hermetic terminal or feedthrough isincorporated within an implantable medical device. For example, thehermetic terminal or feedthrough pins are typically connected to one ormore leadwires of implantable therapy delivery leads. These implantabletherapy delivery leads can effectively act as antennas ofelectromagnetic interference (EMI) signals. Therefore, when theseelectromagnetic signals enter within the interior space of a hermeticimplantable medical device, facilitated by the therapy delivery leads,they can negatively impact the intended function of the medical deviceand as a result, negatively impact therapy delivery intended for apatient by that device. EMI engineers commonly refer to this as the“genie in the bottle” effect. In other words, once the genie (i.e., EMI)is inside the hermetic housing of the device, it can wreak havoc withelectronic circuit functions by cross-coupling and re-radiating withinthe device.

Another particularly problematic condition associated with implantedtherapy delivery leads occurs when a patient is in an MRI environment.In this case, the electrical currents imposed on the implanted therapydelivery leads can cause the leads to heat to the point where tissuedamage is likely. Moreover, RF currents (electromagneticinterference—EMI) may be coupled to implanted therapy delivery leadsresulting in undesirable electrical currents which can enter the AIMDand can disrupt or damage the sensitive electronics within theimplantable medical device.

Therefore, materials selection and fabrication processing parameters areof utmost importance in creating a hermetic terminal (or feedthrough) ora structure embodying a hermetic terminal (or feedthrough), that cansurvive anticipated and possibly catastrophically damaging environmentalconditions and that can be practically and cost effectivelymanufactured.

Hermetic terminals or feedthrough assemblies utilizing ceramicdielectric materials may fail in a brittle manner. A brittle failuretypically occurs when the ceramic structure is deformed elastically upto an intolerable stress, at which point the ceramic failscatastrophically. Most brittle failures occur by crack propagation in atensile stress field. Even microcracking caused by sufficiently hightensile stress concentrations may result in a catastrophic failureincluding loss of hermeticity identified as critical in hermeticterminals for implantable medical devices. Loss of hermeticity may be aresult of design aspects such as a sharp corner which creates a stressriser, mating materials with a difference of coefficient of thermalexpansions (CTE) that generate tensile stresses that ultimately resultin loss of hermeticity of the feedthrough or interconnect structure.

In the specific case of hermetic terminal or feedthrough designs, atensile stress limit for a given ceramic based hermetic design structurecannot be specified because failure stress in these structures is not aconstant. As indicated above, variables affecting stress levels includethe design itself, the materials selection, symmetry of the feedthrough,and the bonding characteristics of mating surfaces within thefeedthrough. Hence, length, width and height of the overall ceramicstructure matters as do the number, spacing, length and diameter of theconductive pathways (vias, terminal pins, leadwires, etc.) in thatstructure. The selection of the mating materials, that is, the materialthat fills the vias (or leadwire) and the material that forms the baseceramic, are important. Finally, the fabrication processing parameters,particularly at binder burnout, sintering and cool down, make adifference. When high reliability is required in an application such asindicated with hermetic terminals or feedthroughs for AIMDs, to provideinsurance for a very low probability of failure it is necessary todesign a hermetic terminal assembly or feedthrough structure so thatstresses imparted by design, materials and/or processing are limited toa smaller level of an average possible failure stress. Further, toprovide insurance for a very low probability of failure in a criticalceramic based assembly or subassembly having sustainable hermeticrequirements, it is also necessary to design structures embodying ahermetic terminal or feedthrough such that stresses in the finalassembly or subassembly are limited to a smaller level of an averagepossible failure stress for the entire assembly or subassembly. Inhermetic terminals and structures comprising hermetic terminals forAIMDs wherein the demand for biocompatibility exists, this task becomeseven more difficult.

The most critical feature of a feedthrough design or any terminalsubassembly is the metal/ceramic interface within the feedthrough thatestablishes the hermetic seal. One embodiment of the present inventiontherefore provides where a hermetic feedthrough comprising a monolithicalumina insulator substrate within which a platinum conductive pathwayor via resides or wherein a metallic leadwire (terminal pin) resides.More specifically in the case of a filled via, the present inventionprovides a hermetic feedthrough in which the hermetic seal is createdthrough the intimate bonding of a platinum metal residing within thealumina substrate.

A traditional ceramic-to-metal hermetic terminal is an assembly of threecomponents: electrical conductors (leadwires, pins, terminal pins,filled vias) that conduct electrical current, a ceramic insulator, and ametal housing, which is referred to as the flange or the ferrule. Brazedjoints typically hermetically seal the metal leadwires and the flange orferrule to the ceramic insulator. For a braze-bonded joint, the brazematerial is generally intended to deform in a ductile manner in order tocompensate for perturbations that stress the bond between the matingmaterials as the braze material may provide ductile strain relief whenthe thermal expansion mismatch between the ceramic and metal is large.Thus, mating materials with large mismatches in CTE can be coupledthrough braze materials whose high creep rate and low yield strengthreduce the stresses generated by the differential contraction existingbetween these mating materials.

Thermal expansion of metal is generally considerably greater than thoseof ceramics. Hence, successfully creating a hermetic structure, and onethat can sustain its hermeticity in service, is challenging due to thelevel of residual stresses in the final structure. Specifically, thermalexpansion mismatch results in stresses acting along the ceramic/metalinterface that tend to separate the ceramic from the metal and so thebond developed between the ceramic and the metal must be of sufficientstrength to withstand these stresses, otherwise adherence failure, thatis, loss of hermeticity, will occur. One method for limiting thesestresses is to select combinations of materials whose thermalcontractions after bonding are matched.

In making the selection for a CTE match, it is important to note thatvery few pairs of materials have essentially identical thermal expansioncurves. Generally, the metal component is selected first based onelectrical and thermal conductivity, thermal expansion, ability to bewelded or soldered, mechanical strength, and chemical resistance orbiocompatibility requirements. The ceramic is then selected basedprimarily on electrical resistivity, dielectric strength, low gaspermeability, environmental stability, and thermal expansioncharacteristics. In the specific case of selecting platinum wire, oftenthe ceramic formulation is modified in order to match its CTE to that ofthe platinum wire. In yet a more specific case of selecting platinumpaste, the platinum paste formulation may be modified as well. If themating materials are alumina of at least 96% purity and essentially pureplatinum paste, then matching CTE is not possible. Thus, for AIMD's,consistently achieving hermetic terminal structures that are capable ofsustaining hermeticity throughout the application's service life hasproven challenging. Another solution would be to use a cermet which ispart ceramic and part metal. For example, the cermet could be analumina/platinum paste that then had a closer CTE to that of the aluminainsulator.

Producing a stress-free structure often not only involves bonding a pairof materials but also achieving that bond at a very specific temperatureso that their contractions on cooling to room temperature areessentially the same even though the contraction curves may notcoincide. Since this often is a significant challenge, hermeticterminals are produced by metalizing the alumina and using a brazingmaterial to form the bond at some other temperature than an intersectionof the CTE curves. (NOTE: Forming a bond between two materials thatbecome rigid at the intersection of the two CTE curves makes it possibleto produce a structure that is stress free at room temperature, unlessthe two CTE curves separate substantially from each other from theintersection point and room temperature.) The deformation of the brazematerial by time-independent plastic flow or creep relaxation limits thestresses generated in the ceramic. Given this, the impact of the rate ofcooling on the final stress level of a structure must also beconsidered. In some cases, residual stresses are generated deliberatelyto provide protective compressive stresses in the ceramic part and inthe bond interface. Usually this is accomplished by selecting componentswith different CTEs. Another way is to control the shrinkage of onematerial over its mating material. In either case, it is important tominimize stress levels such that the interface on which hermeticitydepends is well within the stress level at which failure might occur.

In an embodiment, the present invention is directed to mating boundparticulate high purity alumina of at least 96% and particles ofessentially pure platinum metal that are suspended within a mixture ofsolvents and binders, i.e., a platinum paste. This combination ofmaterials does not use a braze material to buffer the CTE mismatchbetween these two materials. Further, since the intent of thisembodiment is to provide hermetic terminals and subassemblies comprisinghermetic terminals for AIMDs, this particularly embodiment does notconsider modifications to the alumina formulation or the platinum pastein an attempt to match their CTEs. Rather, this embodiment disclosessustainable hermetic terminals and structures embodying these hermeticterminals. This is achieved by adjusting platinum paste solids loading,prescribing via packing, prescribing binder burnout, sintering and cooldown parameters, such that shrinkage of the alumina is greater than theshrinkage of the platinum fill in the via and an intimate and tortuous(a mutually conformal) interface is created that may be either a directbond between the alumina and platinum materials that is hermetic, oralternatively, that may develop an amorphous interfacial layer that isnot susceptible to erosion by body fluids and can tolerate stress levelswithout losing hermeticity. (It will be understood by those skilled inthe art, that this teaching contains other embodiments that are notdependent upon using an essentially pure platinum paste as a conductivefill. Furthermore, many of the embodiments presented herein don't use aconductive filled via but rather a leadwire.)

Regarding EMI, a terminal or feedthrough capacitor EMI filter may bedisposed at, near or within a hermetic terminal or feedthrough resultingin a feedthrough filter capacitor which diverts high frequencyelectrical signals from lead conductors to the housing or case of anAIMD. Many different insulator structures and related mounting methodsare known in the art for use of feedthrough capacitor EMI filters inAIMDs, wherein the insulative structure also provides a hermeticterminal or feedthrough to prevent entry of body fluids into the housingof an AIMD. In the prior art devices, the hermetic terminal subassemblyhas been combined in various ways with a ceramic feedthrough filter EMIcapacitor to decouple interference signals to the housing of the medicaldevice.

In a typical prior art unipolar construction (as described in U.S. Pat.No. 5,333,095 and herein incorporated by reference), a round/discoidal(or rectangular) ceramic feedthrough EMI filter capacitor is combinedwith a hermetic terminal pin assembly to suppress and decouple undesiredinterference or noise transmission along a terminal pin. The feedthroughcapacitor is coaxial having two sets of electrode plates embedded inspaced relation within an insulative dielectric substrate or base,formed typically as a ceramic monolithic structure. One set of theelectrode plates are electrically connected at an inner diametercylindrical surface of the coaxial capacitor structure to the conductiveterminal pin utilized to pass the desired electrical signal or signals.The other or second set of electrode plates are coupled at an outerdiameter surface of the round/discoidal capacitor to a cylindricalferrule of conductive material, wherein the ferrule is electricallyconnected in turn to the conductive housing of the electronic device.The number and dielectric thickness spacing of the electrode plate setsvaries in accordance with the capacitance value and the voltage ratingof the coaxial capacitor. The outer feedthrough capacitor electrodeplate sets (or “ground” plates) are coupled in parallel together by ametalized layer which is fired, sputtered or plated onto the ceramiccapacitor. This metalized band, in turn, is coupled to the ferrule byconductive adhesive, soldering, brazing, welding, or the like. The innerfeedthrough capacitor electrode plate sets (or “active” plates) arecoupled in parallel together by a metalized layer which is either glassfrit fired or plated onto the ceramic capacitor. This metalized band, inturn, is mechanically and electrically coupled to the lead wire(s) byconductive adhesive, soldering, or the like. In operation, the coaxialcapacitor permits passage of relatively low frequency biologic signalsalong the terminal pin, while shielding and decoupling/attenuatingundesired interference signals of typically high frequency to the AIMDconductive housing. Feedthrough capacitors of this general type areavailable in unipolar (one), bipolar (two), tripolar (three), quadpolar(four), pentapolar (five), hexpolar (6) and additional leadconfigurations. The feedthrough capacitors (in both discoidal andrectangular configurations) of this general type are commonly employedin implantable cardiac pacemakers and defibrillators and the like,wherein the pacemaker housing is constructed from a biocompatible metalsuch as titanium alloy, which is electrically and mechanically coupledto the ferrule of the hermetic terminal pin assembly which is in turnelectrically coupled to the coaxial feedthrough filter capacitor. As aresult, the filter capacitor and terminal pin assembly prevents entranceof interference signals to the interior of the pacemaker housing,wherein such interference signals could otherwise adversely affect thedesired cardiac pacing or defibrillation function.

Referring once again to feedthrough capacitor EMI filter assemblies,although these assemblies as described earlier have performed in agenerally satisfactory manner, and notwithstanding that the associatedmanufacturing and assembly costs are unacceptably high in that thechoice of the dielectric material for the capacitor has significantimpacts on cost and final performance of the feedthrough filtercapacitor, alumina ceramic has not been used in the past as thedielectric material for AIMD feedthrough capacitors. Alumina ceramic isstructurally strong and biocompatible with body fluids but has adielectric constant around 6 (less than 10). There are other moreeffective dielectric materials available for use in feedthrough filtercapacitor designs. Relatively high dielectric constant materials (forexample, barium titinate with a dielectric constant of over 2,000) aretraditionally used to manufacture AIMD feedthrough capacitors forintegrated ceramic capacitors and hermetic seals resulting in moreeffective capacitor designs. Yet ceramic dielectric materials such asbarium titinate are not as strong as the alumina ceramic typically usedto manufacture the hermetic seal subassembly in the prior art. Bariumtitinate is also not biocompatible with body fluids. Direct assembly ofthe ceramic capacitor can result in intolerable stress levels to thecapacitor due to the mismatch in coefficients of thermal expansionbetween the titanium pacemaker housing (or other metallic structures)and the capacitor dielectric. Hence, particular care must be used toavoid cracking of the capacitor element. Accordingly, the use ofdielectric materials with a low dielectric constant and a relativelyhigh modulus of toughness are desirable yet still difficult to achievefor capacitance-efficient designs.

Therefore, it is very common in the prior art to construct a hermeticterminal subassembly with a feedthrough capacitor attached near theinside of the AIMD housing on the device side. The feedthrough capacitordoes not have to be made from biocompatible materials because it islocated on the device side inside the AIMD housing. The hermeticterminal subassembly includes conductive pathways (leadwires, pins,terminal pins, filled vias, etc.) to hermetically pass through theinsulator in non-conductive relation with the ferrule or the AIMDhousing. The conductive pathways also pass through the feedthrough holeof the capacitor to electronic circuits disposed inside of the AIMDhousing. These leadwires are typically electrically continuous and, onthe body fluid side, must be biocompatible and non-toxic. Generally,these conductive pathways are constructed of platinum orplatinum-iridium, palladium or palladium-iridium, niobium pins or filledvias with conductive powders, ceramics, gradient materials or the like.Platinum-iridium is an ideal choice because it is biocompatible,non-toxic and is also mechanically very strong. The iridium is added toenhance material stiffness and to enable the hermetic terminalsubassembly leadwire to sustain bending stresses. An issue with the useof platinum for leadwires is that platinum has become extremelyexpensive and may be subject to premature fracture under rigorousprocessing such as ultrasonic cleaning or application use/misuse,possibly unintentional damaging forces resulting from Twiddler'sSyndrome. Twiddler's Syndrome is a situation documented in theliterature where a patient will unconsciously or knowingly twist theimplantable device to the point where attached leads may even fracture.

Accordingly, what is needed is a filtered structure like a hermeticterminal or feedthrough, any subassembly made using same and anyfeedthrough filter EMI capacitor assembly which minimizes intolerablestress levels, allows use of preferred materials for AIMDs or eliminateshigh-priced, platinum, platinum-iridium or equivalent noble metalhermetic terminal subassembly leadwires. Also, what may be needed is anefficient, simple and robust way to connect the leadwires in a headerblock to the novel hermetic terminal subassembly. Correspondingly, it isalso needed to make a similar efficient, simple and robust electricalconnection between the electronics on the device side of the AIMD to thefeedthrough capacitor and hermetic terminal subassembly. The presentinvention fulfills these needs and provides other related advantages.

SUMMARY OF THE INVENTION

An exemplary embodiment of a hermetically sealed feedthrough subassembly116 which is attachable to an active implantable medical device 100(AIMD), includes: (a) an insulator substrate assembly 189, comprising:i) an insulator body 188 defined as having a body fluid side 320opposite a device side 322, the body fluid side and device sideseparated and connected by at least one outer perimeter surface 321; ii)at least one via hole 333 disposed through the insulator body extendingfrom the body fluid side to the device side; iii) an internalmetallization 150,152 formed at least partially on an inside of the atleast one via hole; iv) a first conductive leadwire 118 extending from afirst end 337 to a second end 335, wherein the first conductive leadwireis at least partially disposed within the at least one via hole andwherein the first conductive leadwire first end 337 is disposed past thedevice side of the insulator body; v) a first braze 138 at leastpartially between the first conductive leadwire and the internalmetallization, the first braze forming a first hermetic seal separatingthe body fluid side from the device side; and vi) an externalmetallization 150,152 disposed at least partially on the at least oneouter perimeter surface of the insulator body; and (b) a ferrule 122,comprising: i) a conductive ferrule body 122 defined as having a firstferrule side 338 opposite a second ferrule side 339 and defining aferrule opening 340 between and through the first and second ferrulesides, wherein the insulator body is at least partially disposed withinthe ferrule opening; ii) a second braze 140 at least partially betweenthe external metallization of the insulator body and the conductiveferrule body, the second braze forming a second hermetic sealhermetically sealing the ferrule opening; (c) a feedthrough filtercapacitor 124 disposed on the device side, the feedthrough filtercapacitor comprising: i) at least one active electrode plate 134disposed parallel and spaced from at least one ground electrode plate136, wherein the plates are disposed within a capacitor dielectricsubstrate 119; ii) a first passageway 143 disposed through the capacitordielectric substrate and disposed perpendicular to the plates; iii) acapacitor internal metallization 130 disposed within the firstpassageway electrically connected to the at least one active electrodeplate and in non-conductive relation with the at least one groundelectrode plate; iv) wherein the first conductive leadwire first end 337is disposed within the first passageway 143; (d) a second conductiveleadwire 118′ disposed on the device side having a second conductiveleadwire first end 341 at least partially disposed within the firstpassageway of the feedthrough filter capacitor and having a secondconductive leadwire second end 342 disposed past the feedthrough filtercapacitor configured to be connectable to electronics internal 126 tothe AIMD, wherein the second conductive leadwire first end 341 is at,near or adjacent to the first conductive leadwire first end 337; and (e)a first electrically conductive material 410 forming at least athree-way electrical connection electrically connecting the secondconductive leadwire first end 341, the first conductive leadwire firstend 337 and the capacitor internal metallization 130.

In other exemplary embodiments, the first electrically conductivematerial may be selected from the group consisting of a solder, a solderBGA, a solder paste, an epoxy, and a polyimide. The first conductiveleadwire may not be the same material as the second conductive leadwire.The first conductive leadwire may comprise platinum, palladium, niobiumor tantalum.

The first braze and second braze may each comprise a gold braze. Thefirst braze may be disposed at or near the device side and may notextend to at or near the body fluid side. The first braze may bedisposed at or near the device side and may extend to at or near thebody fluid side.

The first and second hermetic seals may have a leak rate no greater than1×10−7 std cc He/sec.

The external metallization may be disposed at least partially on the atleast one outer perimeter surface of the insulator body and comprise anadhesion metallization and a wetting metallization, wherein the adhesionmetallization is disposed at least partially on the at least one outerperimeter surface of the insulator body and wherein the wettingmetallization is disposed on the adhesion metallization.

An insulative washer 206 may be disposed between the insulator substrateassembly and the feedthrough filter capacitor.

The ferrule may be configured to be joined to an AIMD housing by a laserweld or braze 128.

The ferrule is formed from and as a continuous part of an AIMD housing.

A capacitor external metallization 132 may be disposed on an outsideperimeter surface of the capacitor dielectric substrate and electricallyconnected to the at least one ground electrode plate and innon-conductive relation with the at least one active electrode plate. Asecond electrically conductive material 148 may electrically connect thecapacitor external metallization to the ferrule and/or to the secondbraze.

At least one internal ground plate 137 may be disposed within theinsulator body and electrically connected to the at least one groundelectrode plate of the feedthrough filter capacitor and to the ferrule.

A third conductive leadwire may be at least partially disposed withinthe insulator body and having a third conductive leadwire first enddisposed past the device side of the insulator body.

A braze channel 408 may be electrically connected to the thirdconductive leadwire and the ferrule.

A conductive clip 141 may be electrically connected between and to thethird conductive leadwire and the ferrule.

The conductive ferrule body may include a conductive peninsula 139extending at least partially into the ferrule opening, wherein the thirdconductive leadwire is electrically connected to the conductivepeninsula with a third braze.

Another exemplary embodiment of a hermetically sealed feedthroughsubassembly 116 attachable to an active implantable medical device 100(AIMD), includes: (a) an insulator substrate assembly 189, comprising:i) an insulator body 188 defined as having a body fluid side 320opposite a device side 322, the body fluid side and device sideseparated and connected by at least one outer perimeter surface 321; ii)at least one via hole 333 disposed through the insulator body extendingfrom the body fluid side to the device side; iii) an internalmetallization 150,152 formed at least partially on an inside of the atleast one via hole; iv) a first conductive leadwire 118 extending from afirst end 337 to a second end 335, wherein the first conductive leadwireis at least partially disposed within the at least one via hole andwherein the first conductive leadwire first end 337 is disposed past thedevice side of the insulator body; v) a first braze 138 at leastpartially between the first conductive leadwire and the internalmetallization, the first braze forming a first hermetic seal separatingthe body fluid side from the device side; and vi) an externalmetallization 150,152 disposed at least partially on the at least oneouter perimeter surface of the insulator body; and (b) a ferrule 122,comprising: i) a conductive ferrule body 122 defined as having a firstferrule side 338 opposite a second ferrule side 339 and defining aferrule opening 340 between and through the first and second ferrulesides, wherein the insulator body is at least partially disposed withinthe ferrule opening; ii) a second braze 140 at least partially betweenthe external metallization of the insulator body and the conductiveferrule body, the second braze forming a second hermetic sealhermetically sealing the ferrule opening; (c) a circuit board 147disposed on the device side, the circuit board comprising a firstpassageway 163 disposed through the circuit board, wherein the firstconductive leadwire first end is disposed within the first passageway;(d) a second conductive leadwire 118′ disposed on the device side havinga second conductive leadwire first end 341 at least partially disposedwithin the first passageway of the circuit board and having a secondconductive leadwire second end 342 disposed past the circuit boardconfigured to be connectable to electronics internal 126 to the AIMD,wherein the second conductive leadwire first end 341 is at, near oradjacent to the first conductive leadwire first end 337, wherein thefirst and second conductive leadwires are electrically connected, andwherein the first conductive leadwire is not the same material as thesecond conductive leadwire.

In other exemplary embodiments, a chip capacitor 194 may be disposed onthe circuit board, the chip capacitor comprising: i) at least one activeelectrode plate 134 disposed parallel and spaced from at least oneground electrode plate 136, wherein the plates are disposed within acapacitor dielectric substrate 119; ii) a first capacitor metallization130 disposed on one end of the chip capacitor and electrically connectedto the at least one active electrode plate and in non-conductiverelation with the at least one ground electrode plate; iii) a secondcapacitor metallization 132 disposed on another end of the chipcapacitor and electrically connected to the at least one groundelectrode plate and in non-conductive relation with the at least oneactive electrode plate.

The first capacitor metallization may be electrically connected to thesecond conductive leadwire and/or first conductive leadwire.

The second capacitor metallization may be electrically connected to theferrule and/or the second gold braze.

Other features and advantages of the present invention will becomeapparent from the following more detailed description, when taken inconjunction with the accompanying drawings, which illustrate, by way ofexample, the principles of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings illustrate the invention. In such drawings:

FIG. 1 is a wire-formed diagram of a generic human body showing a numberof exemplary implantable medical devices;

FIG. 2 is a side view of a prior art cardiac pacemaker;

FIG. 3 is a perspective view of a quadpolar feedthrough capacitor andhermetic terminal assembly;

FIG. 4 is a sectional view of the feedthrough and hermetic terminalassembly of FIG. 3;

FIG. 4A is an electrical schematic representation of the quadpolarfiltered feedthrough assembly as previously illustrated in FIGS. 3 and4;

FIG. 5 illustrates an exploded perspective view of an internallygrounded prior art feedthrough capacitor;

FIG. 6 illustrates the structure of FIG. 6 where now the capacitor isformed as a monolithic structure;

FIG. 7 illustrates the structure of FIGS. 6 and 7 fully assembled into afeedthrough filtered hermetic terminal;

FIG. 7A is the electrical schematic for the feedthrough filteredhermetic terminal previously described in FIGS. 5, 6 and 7;

FIG. 8 is a sectional view of an exemplary filtered feedthrough of thepresent invention now showing a conductive leadwire extending throughthe hermetic seal into the device side with a pin joint captured by afeedthrough capacitor;

FIG. 9 is an exploded sectional view of the structure of FIG. 8 nowshown upside-down for better understanding of the manufacturing steps;

FIG. 10 illustrates the completed assembly of FIG. 9 prior to reflowingthe solder preform;

FIG. 11 is very similar to FIG. 8 except on the capacitor device sidecounter-bores are shown instead of counter-sinks and one of theleadwires may be a wire bond pad structure;

FIG. 12 is very similar to FIG. 8, except that the counter-sinks havebeen eliminated on both the right and the left side of the device sideof the feedthrough capacitor;

FIG. 13 is very similar to FIG. 8, except that in this case, thecounter-bores on the device side of the hermetic insulator have beenreplaced by counter-sinks;

FIG. 14 is very similar to FIG. 8, except that the counter-bores in thealumina ceramic insulator have been removed;

FIG. 15 is very similar to FIG. 8, except that the body fluid sideleadwires have been replaced by biostable and biocompatible wire bondpads;

FIG. 16 illustrates an alternate method of manufacturing a nail-headedlead as previously described in FIG. 15;

FIG. 17 illustrates that the nail head may be modified to have anelongated piece that engages the gold braze preform;

FIG. 18 illustrates that a counter-bore may be included within themachine nail head into which the lead protrudes;

FIG. 19 is very similar to FIG. 18, except that in this case, thecounter-bore and nail head is smaller and that a protrusion or extensionis formed on the end of lead to engage counter-bore;

FIG. 20 illustrates that the nail head may have a semi-circular (orother) shape;

FIG. 21 illustrates that the contact area can be further increased byusing a larger gold preform in comparison to FIG. 20;

FIG. 22 is very similar to FIG. 8, except that now the ferrule structurehas been completely eliminated;

FIG. 23 is very similar to FIG. 8, except that the low cost leadwires,instead of being stranded, are solid wire stubs;

FIG. 24 is similar to FIG. 8, but now shows a gold braze moatelectrically coupling the internal ground pin and the ferrule;

FIG. 24A is one possible schematic diagram of the filtered feedthroughassembly of FIG. 24;

FIG. 24B is very similar to FIG. 24, except the body fluid side groundlead has been eliminated from extending past the insulator;

FIG. 25 illustrates an internally grounded feedthrough capacitor aspreviously described in FIG. 24, except that the gold braze moat hasbeen replaced by internal ground plates that are embedded within amultilayer and co-fired insulator;

FIG. 26 illustrates the assembly steps for the structure of FIG. 25 in amanner very similar to that previously described in FIG. 9;

FIG. 27 illustrates the exploded components of FIG. 26 after thecapacitor has been adhesively bonded to the hermetic seal insulator andferrule;

FIG. 28 is another internally grounded capacitor similar to thosepreviously described in FIG. 24 and FIG. 25 where now the gold brazemoat of FIG. 24 has been largely replaced with a metallic piece;

FIG. 29 is a perspective view of the metallic piece from FIG. 28;

FIG. 30 is another internally grounded capacitor version similar toFIGS. 25 and 28 where now the ferrule has been extended into a peninsulaand electrically coupled to the ground lead;

FIG. 31 illustrates a prior art monolithic ceramic capacitor;

FIG. 32 illustrates a cross-section of an MLCC capacitor of FIG. 31taken along lines 32-32;

FIG. 33 illustrates a cross-section of the MLCC capacitor of FIG. 32taken along lines 33-33;

FIG. 34 illustrates a cross-section of the MLCC capacitor of FIG. 32taken along lines 34-34;

FIG. 35 illustrates a prior art bipolar application of MLCC capacitorsto active implantable medical device applications;

FIG. 35A illustrates a prior art unipolar application of MLCC capacitorsto active implantable medical device applications;

FIG. 35B illustrates a top view of the structure of FIG. 35A;

FIG. 36 is a top view of a hexapolar filtered feedthrough of the presentinvention;

FIG. 36A is a sectional view taken along lines 36A-36A from FIG. 37;

FIG. 37 is a sectional view taken along lines 37-37 from FIG. 36;

FIG. 38 is a sectional view taken along lines 38-38 from FIG. 36;

FIG. 39 is an enlarged view taken along lines 39-39 from FIG. 37 but isnow showing a new embodiment;

FIG. 39A is similar to FIG. 39 now showing a meniscus of the gold brazeattaching to the lead;

FIG. 40 is very similar to FIG. 8, except that the device side pins havebeen formed into wire wrapped terminals;

FIG. 41A is a perspective view of a new embodiment of pin used in thepresent invention;

FIG. 41B is the side view of the structure of FIG. 41A;

FIG. 42A is a perspective view of new embodiment of pin used in thepresent invention;

FIG. 42B is the side view of the structure of FIG. 42A;

FIG. 43A is a perspective view of new embodiment of pin used in thepresent invention;

FIG. 43B is the side view of the structure of FIG. 43A;

FIG. 44A is a perspective view of new embodiment of pin used in thepresent invention;

FIG. 44B is the side view of the structure of FIG. 44A;

FIG. 45A is a perspective view of new embodiment of pin used in thepresent invention;

FIG. 45B is the side view of the structure of FIG. 45A;

FIG. 46A is a perspective view of new embodiment of pin used in thepresent invention;

FIG. 46B is the side view of the structure of FIG. 46A;

FIG. 47A is a perspective view of new embodiment of pin used in thepresent invention;

FIG. 47B is the side view of the structure of FIG. 47A;

FIG. 48A is a perspective view of new embodiment of pin used in thepresent invention;

FIG. 48B is the side view of the structure of FIG. 48A;

FIG. 49 is very similar to FIG. 12, except that an eyelet is used inplace of leadwire and its insulation;

FIG. 50 is taken generally from section 50-50 of FIG. 49 and illustratesthat the capacitor inside diameter or via hole metallization may extendonto the device side of the feedthrough capacitor forming a white-walltire configuration, as previously described in FIG. 12; and

FIG. 51 is a chart detailing various solder compositions that may beused when manufacturing the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 1 illustrates various types of active implantable and externalmedical devices 100 that are currently in use. FIG. 1 is a wire formeddiagram of a generic human body showing a number of implanted medicaldevices. 100A is a family of external and implantable hearing deviceswhich can include the group of hearing aids, cochlear implants,piezoelectric sound bridge transducers and the like. 100B includes anentire variety of neurostimulators and brain stimulators.Neurostimulators are used to stimulate the Vagus nerve, for example, totreat epilepsy, obesity and depression. Brain stimulators are similar toa pacemaker-like device and include electrodes implanted deep into thebrain for sensing the onset of a seizure and also providing electricalstimulation to brain tissue to prevent the seizure from actuallyhappening. The lead wires that come from a deep brain stimulator areoften placed using real time imaging. Most commonly such lead wires areplaced during real time MRI. 100C shows a cardiac pacemaker, which iswell-known in the art, may have endocardial or epicardial leads. 100Dincludes the family of left ventricular assist devices (LVAD's), andartificial hearts, including the recently introduced artificial heartknown as the Abiocor. 100E includes an entire family of drug pumps whichcan be used for dispensing of insulin, chemotherapy drugs, painmedications and the like. Insulin pumps are evolving from passivedevices to ones that have sensors and closed loop systems. That is, realtime monitoring of blood sugar levels will occur. These devices tend tobe more sensitive to EMI than passive pumps that have no sense circuitryor externally implanted lead wires. 100F includes a variety of externalor implantable bone growth stimulators for rapid healing of fractures.100G includes urinary incontinence devices. 100H includes the family ofpain relief spinal cord stimulators and anti-tremor stimulators. 100Halso includes an entire family of other types of neurostimulators usedto block pain. 100I includes a family of implantable cardioverterdefibrillators (ICD) devices and also includes the family of congestiveheart failure devices (CHF). This is also known in the art as cardioresynchronization therapy devices, otherwise known as CRT devices. 100Jillustrates an externally worn pack. This pack could be an externalinsulin pump, an external drug pump, an external neurostimulator, aHolter monitor with skin electrodes or even a ventricular assist devicepower pack. 100K illustrates the insertion of an external probe orcatheter. These probes can be inserted into the femoral artery, forexample, or in any other number of locations in the human body.Referring once again to element 100C, the cardiac pacemaker could alsobe any type of biologic data recording device. This would include looprecorders or the like. Referring once again to FIG. 1, 100I is describedas an implantable defibrillator. It should be noted that these could bedefibrillators with either endocardial or epicardial leads. This alsoincludes a new family of subcutaneous defibrillators. In summary, asused herein, the term AIMD includes any device implanted in the humanbody that has at least one electronic component.

FIG. 2 illustrates a prior art cardiac pacemaker 100C showing a sideview. The pacemaker electronics are housed in a hermetically sealed andconductive electromagnetic shield 102 (typically titanium). There is aheader block assembly 104 generally made of thermal-settingnon-conductive plastic, such as Tecothane®. This header block assembly104 houses one or more connector assemblies generally in accordance withISO Standards IS-1, IS-2, or more modern standards, such as IS4 or DF4.These header block connector port assemblies are shown as 106 and 106′.Implantable leadwires 110, 110′ have proximal plugs 108, 108′ and aredesigned to insert into and mate with these header block connectorcavities 106 and 106′, or, in devices that do not have header blockassemblies built directly into the pulse generator itself.

As used herein, the term “lead” refers to an implantable lead containinga lead body and one or more internal lead conductors. A “lead conductor”refers to the conductor that is inside of an implanted lead body. Theterm “leadwire” refers to wiring that is either inside of the activeimplantable medical device (AIMD) housing or inside of the AIMD headerblock assembly or both. Furthermore, as used herein, in general, theterms lead, leadwire and pin are all used interchangeably. Importantly,they are all electrical conductors. This is why, in the broad sense ofthe term, lead, leadwire or pin can all be used interchangeably sincethey are all conductors. Additionally, AIMD, as defined herein, includeselectronic circuits disposed within the human body that have a primaryor secondary battery, or have an alternative energy source, such asenergy induced by motion, thermal or chemical effects or throughexternal induction. As used herein, the term “header block” is thebiocompatible material that attaches between the AIMD housing and thelead. The term “header block connector assembly” refers to the headerblock including the connector ports for the leads and the wiringconnecting the lead connector ports to the hermetic terminalsubassemblies which allow electrical connections to hermetically passinside the device housing. It is also understood by those skilled in theart that the present invention can be applicable to active implantablemedical devices that do not have a header block or header blockconnector assemblies such as pulse generators.

As used herein, the definition of electrically connected or electricalconnection or conductively connected is defined to mean electricallyconnected by physical contact via a conductive medium that passes abroad spectrum of frequencies, including direct current. In thiscontext, it will be understood that electrical connections can be madevia numerous types of physical (direct or indirect) connections, such asthrough conductive adhesive, solder, conductive brazes, circuit boardtraces or circuit board plates, through leadwires and the like.

FIG. 3 illustrates a quadpolar feedthrough capacitor and hermeticterminal subassembly 116 where it has four leadwires 118 a-118 d andfour feedthrough holes (quadpolar). It has a metallic ferrule 122generally of titanium which is ready for laser welding into the AIMDhousing 102 (not shown).

FIG. 4 is a prior art sectional view taken generally from section 4-4from FIG. 3. This illustrates the hermetic terminal subassemblyleadwires 118 a-d passing through the hermetic terminal subassemblyinsulator 120 in non-conductive relationship and also through thefeedthrough capacitor 124 wherein the active electrode plates 134disposed within the capacitor dielectric 119 are electrically connected146 to the hermetic terminal subassembly leadwire 118 and wherein thefeedthrough capacitor ground electrode plates 136 disposed within thecapacitor dielectric 119 are electrically connected 148 to the hermeticterminal subassembly ferrule 122 and gold braze 140. Referring onceagain to FIGS. 3 and 4, in each case it is seen that the hermeticterminal subassembly leadwires 118 a-d pass all the way through theentire structure, namely, the hermetic terminal subassembly 116 and thefeedthrough capacitor 124. In general, these hermetic terminalsubassembly leadwires 118 a-d are electrically and mechanicallycontinuous (single material) and pass through from the body fluid sideto the inside of the device 100 housing 102. Because the hermeticterminal subassembly leadwires 118 a-d pass through from the body fluidside to the inside of the device housing by way of header blockconnector assembly or the like, it is very important that these hermeticterminal subassembly leadwire 118 materials be both biocompatible andnon-toxic. Generally, in the prior art, these hermetic terminalsubassembly leadwires are constructed of platinum or platinum-iridium,palladium or palladium-iridium, niobium or the like. Platinum-iridium isan ideal choice because it is biocompatible, non-toxic and is alsomechanically very strong. The iridium is added to enhance materialstiffness and to enable the hermetic terminal subassembly leadwire tosustain bending stresses.

FIG. 4A is an electrical schematic representation of the quadpolarfiltered feedthrough assembly 116, 124, as previously illustrated inFIGS. 3 and 4. Referring once again to FIG. 4A, one can see that theseare feedthrough capacitors and are three-terminal devices. For example,feedthrough capacitor 116, 124 has a first terminal 118 a, a secondactive terminal 118′a and a ground terminal 102, 122. In the art,feedthrough capacitors are known as broadband low pass filters. Theyhave practically zero series inductance and are desirable in that, theywork over a very wide range of frequencies. In general, feedthroughcapacitors and their internal electrode geometries are well known in theprior art. One is referred to U.S. Pat. Nos. 4,424,551; 5,333,095;5,978,204; 6,643,903; 6,765,779 all of which are incorporated herein byreference.

FIGS. 5, 6 and 7 illustrate an internally grounded prior art feedthroughcapacitor. In general, internally grounded feedthrough capacitors areknown in the prior art with reference to U.S. Pat. Nos. 5,905,627;6,529,103; 6,765,780 and the like, all of which are incorporated hereinby reference. Referring once again to FIG. 5, one can see an internallygrounded feedthrough capacitor, which is octapolar (eight active leads).The eight active leads are labeled 118 a through 118 h on the body fluidside and on the inside of the AIMD housing they are labeled 118′athrough 118′h. The ferrule 122 has a peninsula structure 139, which isconnected to an internal ground pin 118 gnd. Referring now to theoctapolar feedthrough capacitor active electrode plates 134, they aredesigned to overlay in a sandwich fashion the ground electrode plates136. One skilled in the art will realize that one can stack up as manyof these interleaved layers as is required in order to achieve therequired capacitance value and other design factors. The internal groundlead 118 gnd is electrically connected to the ground electrode platelayers 136. The active electrodes 134 a through 134 h are eachelectrically connected through their respective leadwires 118′a through118′h. The overlap between the active electrodes 134 and the groundelectrodes 136 create what is known as effective capacitance area (orECA). The active and ground electrode layers may be interleaved withadditional ceramic layers to build up the dielectric thickness (notshown). In general, the monolithic ceramic feedthrough capacitor 124, asshown in FIG. 6 as element 124, is a result of laminating the variouselectrode layers together and then sintering them at a high temperatureto form a rigid monolithic ceramic block. This is known as a singlefeedthrough capacitor that is multipolar (in this case these areoctapolar or eight active filtered circuits). One can see that there isa perimeter metallization 132 on the outside of the round capacitor i.e.FIG. 3 whereas, in this case in FIG. 6, there is no diametermetallization 132 at all.

There are several major advantages to internal grounding and removal ofthe perimeter or diameter metallization 132. This is best understood byreferring back to FIGS. 3 and 4. Contrary to FIG. 4, with internalgrounding there is no longer a need to apply a diameter metallization132 as shown in FIGS. 5, 6 and 7. In addition, the electrical connection148 has been entirely eliminated between the capacitor diametermetallization 132 and the gold braze 140 and ferrule 122. Theelimination of this electrical connection 148 also makes the capacitorstructure 124 much more resistant to mechanical damage caused bysubsequent laser welding 128 of the hermetic seal assembly 116 into theAIMD housing 102. A significant amount of heat is produced by laserwelding 128 and there is also a mismatch in thermal coefficient ofexpansion materials. By elimination of the electrical connectionmaterial 148, the capacitor 124 is free to float and is therefore, muchmore resistant to such stresses. Referring once again to FIG. 6, one cansee that the internal ground lead 118 gnd makes a low impedanceconnection from the capacitor's internal electrode plates 136 to theferrule 122. This is what eliminates the need for the electricalconnection material 148, as previously illustrated in FIG. 4. It will beappreciated that only one ground pin is shown in FIG. 6, but somedesigns may require a multiplicity of ground pins spaced apart suchthat, there is a very low impedance connection that will operate at lowfrequencies, effectively grounding the capacitor internal electrodes 136at multiple points.

Referring once again to FIG. 6, one can see the ceramic capacitorsubassembly 124 ready to be installed onto the hermetic terminalsubassembly 189. These are shown joined together in FIG. 7 resulting ina hermetically sealed feedthrough capacitor filter assembly 116.

Referring back to FIG. 6, it is important to clarify some confusion asterms of art. The feedthrough capacitor 124 can also be described as athree-terminal feedthrough capacitor with multiple via holes orfeedthrough holes. In a confusing manner, the hermetic terminalsubassembly 189 is often referred to in the art as a hermeticfeedthrough. Therefore, we have the term feedthrough applying both tothe feedthrough capacitor and to the hermetic terminal assembly. As usedherein, these are two separate and distinct subassemblies, which arejoined together in FIG. 7 to become a feedthrough filter hermeticterminal assembly 116 ready for installation into an AIMD housing.Referring once again to FIG. 6, one can see that the internal groundlead 118 gnd does not extend through to the body fluid side of thehermetic terminal feedthrough subassembly 189. It will be appreciatedthat it could be easily and readily extended to the body fluid side, butin most embodiments, it is not necessary.

An issue with the use of platinum for hermetic terminal subassemblyleadwires 118 a-d is that platinum has become extremely expensive andmay be subject to premature fracture under rigorous processing such asultrasonic cleaning or application use/misuse, possibly unintentionaldamaging forces resulting from Twiddler's Syndrome. Accordingly, what isneeded is a filtered structure like a feedthrough capacitor assembly 116which eliminates these high-priced, platinum, platinum-iridium orequivalent noble metal hermetic terminal subassembly leadwires 118. Foradditional examples of hermetic terminal subassemblies with feedthroughcapacitors that employ leadwires 118, one is referred to U.S. Pat. Nos.5,333,095, 5,896,267, 5,751,539, 5,905,627, 5,959,829, 5,973,906,6,008,980, 6,159,560, 6,275,379, 6,456,481, 6,529,103, 6,566,978,6,567,259, 6,643,903, 6,765,779, 6,765,780, 6,888,715, 6,985,347,6,987,660, 6,999,818, 7,012,192, 7,035,076, 7,038,900, 7,113,387,7,136,273, 7,199,995. 7,310,216, 7,327,553, 7,489,495, 7,535,693,7,551,963, 7,623,335, 7,797,048, 7,957,806, 8,095,224, 8,179,658, thecontents of all of which are incorporated herein by reference.

FIG. 7A is the prior art electrical schematic for the feedthroughfiltered hermetic terminal 116 previously described in FIGS. 5, 6 and 7.Referring once again to FIG. 7A, one can see the telemetry pin T, whichpasses through the filtered hermetic terminal assembly 116 without anyappreciable capacitance to ground. In other words, it would beundesirable to have any high frequency filtering of the telemetryterminal since this would preclude the ability to recover storedinformation or program the AIMD device remotely. Leadwires 118 a through118 h all have feedthrough capacitor hermetic terminal assemblies 116,124 as shown. The internal ground pin 118 gnd is shown only on thedevice side of the hermetic terminal subassembly 189. Referring onceagain to FIGS. 5, 6, 7 and 7A, it will be noted that the feedthroughfilter hermetic seal subassembly has been inverted with reference toFIGS. 2, 3 and 4. It should also be noted that the capacitor 124 isstill on the device side; it's just drawn inverted.

FIG. 8 illustrates a body fluid side leadwire 118, which is generallyrouted to an implantable leadwire, including one or more distal tipelectrodes. Leadwire 118 could also be routed through a connector blockon the body fluid side wherein, implantable leadwires may be plugged in.The body fluid side leadwire 118 passed through the insulator 188 of thehermetic terminal subassembly 189. As can be seen, the leadwire extendson the device side partial through feedthrough capacitor 124. A low costleadwire 118′ is inserted into the feedthrough capacitor via (orfeedthrough holes) and are butted up to the device side leadwires 118 orplaced adjacent the device side leadwires 118 as shown on the left-handside of FIG. 8. The device side leadwire 118 may comprise a number ofdifferent materials, but in general, they must all be biocompatible,non-toxic and biostable. Leadwire materials include platinum, palladium,tantalum, niobium, titanium, alloys containing iridium, or alloys of anyof the materials listed above. Referring back to FIG. 8, one can seethat the body fluid side leadwire 118 is physically and electricallyattached to the low-cost device side leadwire 118′ within an electricalconnection 410 made within the feedthrough capacitor via holes. Asdefined herein, it will be appreciated that a feedthrough capacitor viahole is the same as a feedthrough capacitor feedthrough hole. In bothcases, the feedthrough hole is a passageway wherein, one or moreleadwires pass through the feedthrough capacitor. In fact, this is whyit is called a feedthrough capacitor. Electrical attachment material 410is preferably a high temperature solder. Two commonly available solderswould be AG1.5, which consists of 97.5% lead, 1% tin and 1.5% silver.Another acceptable solder is SN10, comprising 10% tin, 88% lead and 2%silver. It will also be appreciated that material 410 could be a lowtemperature braze or it could be a thermal-setting conductive adhesive.As shown on the left-hand side of FIG. 8, leadwire 118′ is co-attachedwith electrical attachment 410 to device side leadwire 118. Thefeedthrough capacitor 124 is attached to the hermetic seal insulator 188using an insulator 206. Insulator 206 can be of a variety of materials,including adhesive-backed polyimide washers. On the left-hand side ofFIG. 8, the insulator 206 has a very small diameter hole therebypreventing electrical material 410 from contacting gold braze material138 in the counter bore area 129 of the hermetic seal that is formedbetween leadwire 118 and the insulator 188. This is fine if the leadwire118 on the body fluid side is generally of non-oxidized and solderablematerials, such as platinum, palladium or the like. However, if thedevice side leadwires are of lower cost materials, such as niobium ortantalum, those materials generally are not solderable and are heavilyoxidized thereby, making it difficult without welding to achieve a goodlow impedance, low resistance electrical connection. This problem isreadily solved by the embodiment of FIG. 8 shown on the right-hand sidewherein, the insulative washer 206 has a much larger hole thereby,allowing electrical contact material 410 to directly contact the goldbraze material 138′. Therefore, the electrical connection between thecapacitor active electrode plates to its inside diameter via holemetallization 130 is accomplished, not by an electrical attachment atall to the device side leadwire 188, but to the gold braze 138′, whichprovides a non-oxidized and highly noble surface. During the gold brazeoperation, which forms the hermetic seal subassembly, the gold braze 138would burn through any surface oxide and make a very low impedancemetallurgical connection directly to the leadwire 118 itself. This is avery important embodiment in that, the leadwire of the body fluid side118 can comprise very low-cost materials as compared to platinum orpalladium. One is also referred to U.S. Pat. No. 6,888,715, the contentsof which are herein incorporated by reference.

Referring once again to FIG. 8, one can see that there is an adhesionlayer 152 and a wetting layer 150 that have been applied to the insidediameter and outside diameter (or perimeter) of the alumina ceramicinsulator 188. These are required because gold preforms generally willnot wet or adhere to bare alumina insulators. The alumina insulatorshown in FIG. 8 has been manufactured in a separate manufacturingoperation and sintered and fired (as hard as a rock). Through sputteringprocesses, an adhesion layer is first laid down and then over that, awetting layer 150 is laid down. This can also be done by somemanufacturers in a single process, which combines wetting and adhesionproperties into one (such as niobium). Other processes use a molybdenumadhesion layer and then a sputtered titanium layer to which gold willreadily wet to. In summary, in order for the gold braze preforms 138 and140 to properly flow and wet, there must first be layers sputtered ontothe ceramic insulator, which will perform both adhesion and wettingcharacteristics. This will not be further described throughout thisinvention, but it will be appreciated that every time a gold braze isshown, that the adhesion/wetting layer is present. It will also be notedthat on the outside diameter (when necessary) and inside diameter holesof the feedthrough capacitor 124, that there is a metallization 130.This can be a multilayer process, such as a copper and tin or copper andsilver during an electroplating. The embodiment shown throughout thisinvention would be one of applying a silver or palladium-silver bearingglass frit, which is fired on as a single layer 130. It will beappreciated that the metallization 130 or capacitor 124 outside diameteror perimeter metallization 132 be shown throughout this invention assingle layer (but as previously mentioned, it could consist of severaldifferent layers).

It will be appreciated that the machined ferrule 122, illustrated inFIG. 8, could also be replaced by a stamped ferrule or even a two-pieceferrule, as taught in U.S. Pat. Nos. 8,927,862; 9,431,814; and8,604,341; and U.S. Patent Publication Nos. 2015/0245468 and2016/0287883, the contents of all of which are incorporated herein byreference. Referring once again to FIG. 8, the machined ferrule 122 isrelatively expensive, not just because of the machining process, butbecause the machining starts with a solid block of titanium and there isa great deal of scrap produced. A stamped metal ferrule or a two-piecestamped ferrule thereby, significantly reduces the machining costs andalso results in a material savings. It will be understood that any ofthe machined ferrule in this teaching could be replaced with stampedferrules in accordance with the referenced patents and publications.

Referring once again to FIG. 8, it will be appreciated that the deviceside leadwire 118′ can be a solid wire, can be a stranded wire, can be abraided wire and the like. The advantage of stranded wires or braidedwires is they are generally more resistant to shock and vibration load.Stranded or braided wires are also more flexible and more easily routedto internal circuit boards (not shown). At first glance, it would beappear from FIG. 8 that this is a bipolar (2) leaded device. However, itwill be appreciated that this section could also represent a sectiontaken from prior art FIG. 3 (quadpolar), a section taken from prior artFIG. 7 (octapolar) or the like. In other words, the bipolar device ofFIG. 8 is for illustrative purposes only. It will be appreciated thatany number of active leadwires 118 may be embodied. It will also beappreciated that telemetry pins T, as illustrated in FIGS. 5, 6 and 7,may also pass through the insulator structure 188. Such telemetry pinswould not be associated with any feedthrough capacitor active electrodeplates as it would be undesirable to attenuate high frequencies on ahigh frequency RF telemetry circuit. It will be appreciated in all ofthe drawings of this patent, that the principles are applicable to anynumber of active pins 118 or telemetry pins T.

As shown in FIG. 9, after the hermetic seal subassembly 189 is formed,the capacitor 124 is subsequently added. First, the insulator assembly189 is inverted and an optional adhesive insulative washer 206 isplaced. The capacitor 124 is disposed on top of the adhesive washer,which is then cured in an elevated temperature. This not only firmly andmechanically attaches the feedthrough capacitor 124 to the hermetic sealsubassembly 189, but it also confines the area around the leadwire 118,such that a subsequent soldering operation cannot flow between thecapacitor and the insulator, thereby, shorting out from lead to lead orlead to ferrule (ground). A low cost insulated (insulation 123 isoptional) lead 118′ is placed along with a solder preform 410. This isbest illustrated in FIG. 9 where the hermetic seal subassembly 189 hasbeen inverted and one can see the two leadwires 118 sticking up. Theinsulative washer 206 is then disposed over the leadwires 118 and thefeedthrough capacitor 124 is placed adjacent the insulating adhesivewasher 206. This is then pre-cured so they are firmly adhered andmechanically bonded together. During the curing of adhesive washer 206,it is usually required that a weighting or a spring fixture (not shown)be placed on the top (device side) of the feedthrough capacitor 124.This pushes the feedthrough capacitor firmly against the adhesive washer206 and the surface of the insulator 188 so that they all bond together.Then, a solder preform 410 is placed into a counter-bore or counter-sink127 in the device side surface of the feedthrough capacitor, as shown onthe right. It will be noted that the left-hand hole in insulator 206 islarger and also the solder preform 410′ is also larger. This is sosolder can flow, not only all the way through the feedthrough capacitorvia hole (passageway) 143, but also all the way to contact gold brazematerial 138 of the hermetic seal subassembly 189. Next, a low costleadwire, which is typically a tinned-copper leadwire 118′, is placedthrough the solder preform 410 or 410′. The length of the conductivepart of this leadwire 118′ is chosen so that the low-cost tin-copperleadwire will either touch or become very close to the leadwire 118 ofthe hermetic insulator.

As best shown in FIGS. 8 and 9 and for clarity with the claims, theinsulator substrate assembly 189 is comprised of the insulator body 188which is defined as having a first insulator side (body fluid side) 320opposite a second insulator side (device side) 322, the first insulatorside and second insulator side separated and connected by at least oneoutside surface (outer perimeter surface) 321. At least one via hole 333is disposed through the insulator body extending from the firstinsulator side to the second insulator side. A first conductive leadwire118 has a first conductive leadwire first end 337 at least partiallyextending proud of the insulator surface 322 and having a firstconductive leadwire second end 335 disposed past the first insulatorside (body fluid side). The first conductive leadwire first end 337 isdisposed near, at or adjacent to the second conductive leadwire firstend 341. The first conductive leadwire 118 is also not the same materialas the second conductive leadwire 118′.

The ferrule comprises a conductive ferrule body 122 defined as having afirst ferrule side (body fluid ferrule side) 338 opposite a secondferrule side (device ferrule side) 339 and defining a ferrule opening340 between and through the first and second ferrule sides.

The second (device side) conductive leadwire 118′ has a secondconductive leadwire first end 341 at least partially disposed within thefirst passageway of the feedthrough filter capacitor 124 and having asecond conductive leadwire second end 342 disposed past the feedthroughfilter capacitor. The second conductive leadwire second end 342 isconfigured to be connectable to electronics internal to the AIMD (notshown). Therefore, the first conductive leadwire second end 337 is atleast partially disposed within the first passageway of the feedthroughfilter capacitor, wherein the first conductive leadwire second end 337is at, near or adjacent to the second conductive leadwire first end 341.

FIG. 10 illustrates the completed assembly prior to reflowing the solderpreform 410.

Referring now back to FIG. 8, one can see that the assembly 116 has beeninverted in comparison to FIG. 10, but the solder preform 410, 410′ hasreflowed and is fully flowed around the tin-copper portion 118′ of thelow-cost device side leadwire and also around the leadwire 118 from thehermetic seal subassembly 189. FIG. 8 increases the reliability of thewiring to the device side of the electronics through lead 118′ with itsoptional insulation 123. As one can see, the reflow solder connectionnot only forms a butt joint between the low cost leadwire 118′ andleadwire 118, but also the solder 410 flows all about both leads 118′and 118, thereby making the electrical connection not only a buttconnection, but also a shear connection. It will be known to reliabilityengineers that solder joints that embody shear stresses will be moreresistant to shock vibration, reflow and the like. Shear forces are alsoset up between the solder 410, 410′ and the inside diameter of thecapacitor feedthrough hole metallization 130. This double shearincreases the mechanical strength of the attachment of the low costleadwire 118′ and also increases its pull strength force. It will alsobe appreciated that instead of a solder preform 410, 410′, one could usea thermal-setting conductive adhesive, such as a conductive epoxy, lowtemperature braze or a conductive polyimide.

Referring back to FIG. 8, one can see that the solder (or equivalentmaterial) 410, 410′ has flowed all about the exposed end portion of theleadwire 118 and the low cost leadwire (tin/copper) 118′. As one cansee, there is both a butt joint and a shear joint formed by solderflowing all around the outside diameters of both leadwire 118 andleadwire 118′. The choice of solders for making connection 410, 410′ aresomewhat limited in that, they need to have a relatively high meltingtemperature. This is because of the subsequent laser welding operation128 wherein, the ferrule 122 is joined mechanically and hermetically tothe AIMD housing 102. The laser welding operation 128 elevates theentire structure 116 to a fairly high temperature (approximately 260°C.). This results in a temperature rise, which causes electricalconnection material 410, 410′ to be elevated to temperatures as high as220° C. The inventors have also seen applications where this electricalconnection material may be elevated by certain laser weld operations 128to as much as 260° C. or even 270° C. This rules out the use of lowtemperature solders 410, 410′, which would have melting points belowthese temperatures. The reason for the variation in the maximumtemperatures that the electrical connection 410 may be exposed to duringlaser welding 128 is that not all ferrule structures are the same andnot all AIMD housing 102 are the same. In addition, some AIMDmanufacturers use multiple pass laser welds and some use multiple passlaser welds 128. In other words, the maximum temperature of the material410, 410′ is application specific. There is another property of theoverall assembly 116 that is imposed by the medical implant industry.This property is known as pull strength. During qualification, customersrequire pull strengths ranging anywhere from two to four, or even fivepounds in range. This generally is done in a pull strength tester wherethe leads are put in tension. The inventors tested the assembly of FIG.8 with two different high temperature solders 410, 410′. One, embodyingSN10 and the other was using AG1.5. Both of these solders have re-flowtemperatures in the range of 290° C. The inventors performed variouspull strengths and found that the pull strengths always exceeded twopounds and, in many cases, depending on process control, exceeded sevenpounds. Worse case experiments were run with the leadwires 118 andleadwires 118′ not inside of a feedthrough capacitor. In other words,the two ends were joined just with solder and a certain amount of solderspread over the side walls. It was encouraging to note that in no casedid the pull strength of these worse case assemblies, fall below twopounds. Subsequent testing in the inside diameter feedthrough capacitorsgenerally showed pull strengths in the range of six to seven pounds.Accordingly, the inventors are satisfied that the novel arrangement asshown in FIG. 8, will meet both the pull strength, the high temperature,the shock and vibration, and the high temperature resistancerequirements of the active implantable medical implant industry.Generally, the pull testing conducted by the experimenters placed atinsel load on leadwires 118′ until the point of failure.

Referring once again to FIG. 10, the solder preform 410, 410′ desirablyhas a relatively high melting point. This is because the customer issubsequently going to perform a laser weld 128 as shown in FIG. 8. Thislaser weld 128 goes all around the circumference or perimeter of ferrule122, which makes the electrical and mechanical and hermetic attachmentbetween the ferrule and the AIMD housing 102. This creates a verysignificant heat pulse, as previously stated. It would be veryundesirable if the electrical connection material 410, 410′ reflowedduring the customer laser welding application 128. Reflow of solder 410,410′ could cause the electrical conductive material, such as a solder toflow to undesired locations and even short out the interior of theactive implantable medical device. Two preferred solders would be AG1.5or SN10.

Referring once again to FIG. 8, one can see that the body fluid side,low cost leadwire 118 can have a gap 109 between it and the leadwire118. This gap 109 is shown on the left-hand side of the figure. It willalso be appreciated that between the device side leadwire 118′, theremay be a small gap 109 with the leadwire 118, as shown on the left, orthe two may be butted directly against each other, as shown on theright. It should also be noted that the melted solder preform 410 picksup additional strength, not only because it is in shear around thecircumference of leadwire 118 and leadwire 118′, but it is also wettedto the inside feedthrough capacitor diameter metallization 130. It willbe appreciated throughout the rest of this patent that the electricalconnection material 410 will be referred to as a solder. The word“solder” shall be construed broadly to include thermal-settingconductive adhesives, low temperature brazes and various types of solderalloys. Accordingly, the solder preform 410 not only mates aroundleadwire 118 and 118′, but it also wets completely to the ceramiccapacitor 124 inside diameter of feedthrough hole metallization 130.This creates additional shear strength. This goes to facilitate therequirement in the industry that the device side leadwire have a veryhigh pull strength. In general, pull strengths are specified generallybetween the range of 2 lbs. to 5 lbs. This is equally applicable to thebody fluid side leads 118 and the device side leadwires 118′.Accordingly, it is very important that process controls ensure that thesolder preform 410, 410′ flows very evenly around both leadwire 118 andleadwire 118′ and also properly wets the metallization 130 (withouthaving it dissolve into the solder, a situation known in the industry asleaching). Ideally, it would preferable to be able to flow the solderpreform 410, 410′ without the use of fluxes. If one uses a flux, thenone must perform cleaning steps to remove the flux. Accordingly, theassembly as illustrated in FIG. 8, is best accomplished either in aconveyor-type curtain soldering furnace or as a bulk process in a devicecalled a DAP sealer. In both cases, the soldering can be accomplished byeither reducing or inert gases, thereby eliminating the need for fluxesand also a temperature profile could be created where the relativelyfragile ceramic capacitor 124 can be slowly heated up and the solder410, 410′ molten stage can be held to a relatively low amount of timeand then the entire assembly is then slowly cooled down. It is desirablenot to have the high temperature solder 410, 410′ be molten for too longas the capacitor termination material 130 can actually dissolve or leachundesirably into solder 410, 410′.

Referring once again to FIG. 8, one can see that on the device side, theceramic capacitor 124 has counter-sinks 127 to facilitate placement ofthe solder preform 410, 410′. This counter-sink is best viewed in FIG.9, as element 127. Referring once again to FIG. 8, one can see thatthere are counter-bores 129 placed in the insulator 188 of the hermeticterminal subassembly 189. These allow for convenient placement of goldbraze preforms (not shown).

Referring back to FIG. 8, it will be appreciated that the hermetic sealsubassembly 189 comprises, in general, an alumina ceramic insulator 188with sputtered surfaces that allow it to be gold brazed 138, 140 to bothleadwires 118 and the ferrule 122. These gold brazes make both aphysical and a hermetic seal between the insulator 188 and body fluidside leadwires 118. There is a second gold braze 140 between the ferrule122 and the hermetic insulator 188. It will be appreciated that it isnot necessary to have a gold brazed hermetic seal subassembly 189. It isknown in the art that this could also be a glass seal. In other words,instead of being an alumina ceramic, insulator 188 can comprise a glassand a glass seal which is formed between the glass and leadwires 118 andat the same time, to the ferrule structure 122. It is also known in theart that these can be fusion or compression glasses comprising a numberof materials, including borosilicates and the like. Referring once againto FIG. 8, one can appreciate that if the hermetic seal subassembly 189is a glass sealed hermetic seal subassembly, then one no longer has agold braze 138′ to the leadwire 118. In the case where the leadwire 118is a low-cost niobium or tantalum leadwire (or equivalent materials),then it would be necessary to treat the proud portion 337 (that is proudof the device side or second surface of the hermetic seal insulator 188)such that the electrical attach material 410 can make proper electricaland physical contact with the leadwire 118. For example, if the leadwire118 was of niobium or tantalum or even titanium, it would be necessaryto treat the proud portion 337 with an electroplating, such as a goldplating, or sputtering operations, including a platinum or goldsputtering operation, such that proper electrical connection between theelectrical connection 410, leadwire 118′ and the proud portion 337 ofleadwire 118 can be accomplished.

Now referring to FIG. 9, by focusing only on the bottom portion 189,which is the hermetic terminal subassembly. One can see that when thegold braze 138 is placed through gravitational and capillary action inthe gold braze furnace, it will flow down and form the gold brazehermetic seal joint 138. Referring now to FIG. 8, the hermetic sealsubassembly 189 has been inverted. Since the gold braze joints 138 and140 have been formed at very high temperature, they will not bedisturbed nor will they reflow during the subsequent capacitor 124soldering operation 410, 410′. It is important to realize that in atypical manufacturing operation, the hermetic terminal subassembly 189is manufactured in an entirely different manufacturing line with adifferent set of controls, including braze furnaces and the like. It isequally important to note that the feedthrough capacitor assembly 124 isgenerally performed in an entirely different manufacturing line (usuallyin Class 10,000 or better clean rooms). It is a monolithic deviceconsisting of alternating layers of ground and active electrodes, whichgoes through a number of binder bake-out and then sintering operations.Subsequent to that, metallization layers 130 and outside diametermetallization layer 132 are applied, either by electroplating, byapplying conductive glass frits (and firing) and the like. In the finaloperation shown in FIG. 9, the capacitor subassembly 124 is adhered byadhesive backed insulator 206 to the hermetic terminal subassembly 189and at the same time, device-side leadwires 118′ are co-joined.

Referring once again to FIG. 9, one can see that after the solderpreform 410, 410′ is reflowed, one still needs to make the electricalconnection from the capacitor outside diameter perimeter metallization132 to the ferrule 122 using electrical attachment material 148 as shownin FIG. 8. This attachment 148 could be performed prior to the solderreflow 410, 410′ or after. In one embodiment, the electrical attachmentmaterial would be a thermally-conductive polyimide, which is curedaround 290 to 300° C., but can withstand short-term temperatures up to500° C. So, in this case, the capacitor diameter or perimetermetallization would first be formed and then the solder preform 410,410′ would subsequently be reflowed at around 300° C. Referring back toFIG. 8, one can see that the electrical connection material 148 contactsgold braze surface 140, which provides an oxide-free, very low impedanceelectrical connection. One is referred to U.S. Pat. No. 6,765,779, thecontents of which are incorporated herein by reference, which describesthe importance of making an electrical connection to an oxide-freesurface instead of to oxidized titanium surfaces.

FIG. 10 illustrates the capacitor 124 co-joined to the hermetic sealsubassembly 189 by adhesive washer 206. The device side leads 118′ havebeen placed through their solder preforms 410, 410′. FIG. 10 illustratesthe entire assembly 116 just prior to reflow of the solder preform 410,410′. After the solder preform 410 is reflowed at an elevatedtemperature, it will result in the structure 116, as illustrated in FIG.8 (inverted). As can be seen, the solder preform 410, 410′ flows allaround the two leadwire 118, 118′.

FIG. 11 is very similar to FIG. 8 except on the capacitor device side,counter-bores 135 are shown instead of counter-sinks 127. The right sideof the device now has a wire bond pad 131 which may be proud of thefeedthrough capacitor 124. This nail head 131 may be proud of the deviceside surface of the feedthrough capacitor 124 (as shown) or it may beflush with the surface (not shown), or it may be reduced below thesurface (not shown), or it could be replaced with the wire attachmentstructures in FIGS. 41-48.

FIG. 12 is very similar to FIG. 8, except that the counter-sinks 127have been eliminated on both the right and the left side of the deviceside of the feedthrough capacitor 124. This will make it more difficultto place a solder preform 410, 410′ and have it reflow properly.However, it will be understood by one skilled in the art thatcounter-bores, counter-sinks or combination and variations thereof canbe used, or alternatively, as shown in FIG. 12 no such structures areused to help locate and place the solder preform 410, 410′.

Referring back to FIG. 12, one can see that the feedthrough capacitorinside diameter (or via hole) metallization 130 has been extended 411onto the device side surface (extended onto the device side) of thefeedthrough capacitor 124 such that it forms a circular portion, whichis also known in the industry as a white-wall tire shape. As previouslydescribed, this metallization 130, 411 can be mechanically andelectrically adhered to the capacitor electrode plates by firing asilver or palladium-silver glass frit, electroplating or the like. Inall cases, the metallization 130, 411 firmly adheres to the body of thefeedthrough capacitor 124. The presence of the white-wall tiremetallization 411 allows for the solder 410 to form a fillet 410′between the lead conductor 118′ and metallization band 411. This forms asolid fillet, which is known in the industry to have very high strength.In other words, the white-wall tire metallization 411 and correspondingsolder (or thermal-setting conductive adhesive) filet adds greatly tothe pull strength of the lead 118′, 123.

FIG. 13 is very similar to FIG. 8, except that in this case, thecounter-bores on the device side of the hermetic insulator 188 have beenreplaced by counter-sinks 133.

FIG. 14 is very similar to FIG. 8, except that the counter-bores 129 inthe alumina ceramic insulator 188 have been removed. This will make itmore difficult to place gold brazed preforms 138 (not shown beforebrazing). Again, it will be understood by one skilled in the art thatcounter-bores, counter-sinks or combination and variations thereof canbe used, or alternatively, as shown in FIG. 14 no such structures areused in the insulator 188 to help locate and place the gold brazedpreforms 138 (not shown before brazing).

FIG. 15 is very similar to FIG. 8, except that the body fluid sideleadwires 118 have been replaced by biostable and biocompatible wirebond pads 133. In a preferred embodiment, these pads are drawn from asingle piece of wire 118, which extends down into the gold braze 138.

FIG. 16 illustrates an alternate method of manufacturing a nail-headedlead 118 as previously described in FIG. 15. Instead of continuouslydrawing the nail head 133 as a continuous piece of the leadwire 118,FIG. 16 illustrates that the nail head 412 may be machined as a separatestructure and then gold brazed 422 to the lead 118. Gold braze 422 wouldtypically be a co-brazing operation at the same time gold brazes 138 and140 are formed.

FIG. 17 illustrates that the nail head 410 may be modified to have anelongated piece that engages the gold braze preform. This aids incentering and aligning the nail head 412 with the lead 118.

In FIG. 18, one can see that a counter-bore may be included within themachine nail head 412 into which the lead 118 protrudes. Again, thishelps with alignment during the gold braze flowing operation 422.

FIG. 19 is very similar to FIG. 18, except that in this case, thecounter-bore and nail head 412 is smaller and that a protrusion orextension is formed on the end of lead 118 to engage counter-bore 418.Again, this is to help with maintaining alignment during the gold brazereflow operation 422.

FIG. 20 illustrates that the nail head 412 may have a semi-circular (orother) shape. The advantage of the semi-circular shape is that thisincreases the wetting and shear area to the gold braze 422 and alsoincreases the gold braze contact area to the lead 118. This contact areacan be further increased by using a larger gold preform 422, asillustrated in FIG. 21. Referring back to FIGS. 16 through 21, it willbe appreciated that a weighting fixture (not shown) may be applied tothe top of any of the nail heads or even an alignment fixture so thatthey are properly held in place during the gold braze reflow 422.

FIG. 22 is very similar to FIG. 8, except that the ferrule structure 122has been completely eliminated. By eliminating the ferrule, oneeliminates a significant amount of cost. Typically, these titaniumferrules are machined out of a solid piece of titanium, which entails asubstantial amount of machining time, labor and scrap. Referring to FIG.22, one can see that the AIMD housing 102 has been bent down to form anaperture 428 into which the hermetic seal insulator 188 is aligned. Theinsulator 188 is then gold brazed 140 directly to the AIMD housing 102.This is actually co-brazed along with gold braze 138 as previouslydescribed. It will be appreciated that instead of gold brazing directlyto the entire AIMD housing 102, the gold braze 140 may be done to a lidor a shield assembly, which is subsequently laser welded into the AIMDhousing 102 (not shown). Referring once again to FIG. 22, one can seethat on the left side, a low cost insulated leadwire 118′ has beenco-soldered 410 on the inside diameter of the feedthrough capacitor toleadwire 118. On the right-hand side of FIG. 22, towards the deviceside, one can see an alternative low cost leadwire 118′ wherein, theinsulation 123 can be added later. It will be appreciated that thelength of leadwire 118′ can be of any suitable length to reach a circuitboard or even provide for a stress-relieving or strain-relieving loop.The insulation 123 on the right side of FIG. 22 can be an insulationsleeve, an insulation tubing or even a heat-shrink tubing, which isadded later. A preferred material would be an insulative tubingconsisting of KAPTON.

FIG. 23 is the same as FIG. 8, except that the low cost leadwires 118′,instead of being stranded, are solid wire stubs. The lengths of theseleadwire stubs 118′ vary in length below the feedthrough capacitor 124in accordance with the application. For example, if the customer wasgoing to install a very thin flex cable to make the connection betweenleadwires 118′ and a circuit board 126 (not shown), then the leadwires118′ need not stick out very far. However, if a circuit board was beingplaced adjacent the feedthrough capacitor 124 with via holes (notshown), then it might be necessary to make the leadwire stubs 118′ alittle longer.

FIG. 24 seems similar to FIG. 8, but it also incorporates all theimportant advantages previously described for internally groundedcapacitors shown in FIGS. 5, 6, 7 and 7A. Internally groundedfeedthrough capacitors are described in U.S. Pat. No. 5,905,627, thecontents of which are incorporated herein by reference. Referring backto FIG. 6, one can see that an internal ground pin 118 gnd was providedby co-brazing it into a peninsula 139 of ferrule 122. Instead ofmachining a peninsula 139 out of the titanium ferrule, a gold braze moat138, 140, 408 is provided. One will appreciate that when viewedisometrically, this gold braze moat could have the very same appearanceas a peninsula 139 as previously described in FIG. 6. One willappreciate that this peninsula could have rounded or square edges or thelike. (In other words, it need not look identical to that previouslyillustrated in FIG. 6). Also, there could be a number of thesepeninsulas, particularly for a long, rectangular part in order toprovide a low impedance connection to the feedthrough capacitor internalground electrode plates. It will also be appreciated that thesepeninsulas could alternate along the left and right sides of a longrectangular internally grounded feedthrough capacitor. Again, this is inorder to make sure that the impedance of the internal ground electrodeplate are kept low, such that a high level of filter performance knownas insertion loss can be achieved for each active pin. Referring back toFIG. 24, one will see that leadwire 118 gnd has been extended into thebody fluid side. As previously noted, typically it is not necessary toprovide a grounded lead on the body fluid side. However, for certainAIMD abandoned lead port applications, for magnetic resonance imaging, aground lead provided to the header block could be a very convenient wayof dissipating energy from an abandoned lead or a defective lead. For amore thorough explanation, one is referred to U.S. Patent PublicationNo. 2014/024,3944, entitled HEADER BLOCK FOR AN AIMD WITH AN ABANDONEDLEAD CONNECTOR CAVITY, the contents of which are incorporated herein byreference. The feedthrough capacitor 124 of FIG. 24 is internallygrounded, as previously described in FIGS. 5, 6 and 7. It also has allof the intended advantages previously described in FIGS. 5, 6 and 7. Incomparison to FIG. 8, one can see that the capacitor outside diametermetallization 132 has been completely eliminated. The capacitor outsidediameter or perimeter electrical connection 148 to the ferrule has alsobeen completely eliminated. As previously described, not only does thisreduce many expensive manufacturing operations and eliminate expensivematerials, but it also allows the capacitor body 124 to mechanicallyfloat from the ferrule 122. This is important during subsequent customerlaser welding 128 of the filtered feedthrough subassembly 189 into theAIMD housing 102 as illustrated in FIG. 8. The capacitor 124 will bemuch less sensitive to the heat pulse (thermal shock) created by thislaser welding 128 since it is thermally isolated and also mechanicallyisolated. In other words, there are mismatches in the thermalcoefficient of expansion of the ferrule 122 and the ceramic dielectric124 itself. The insulative washer 206 is preferably a thin washer, whichis somewhat flexible; thereby, mechanically isolating the capacitor evenfurther. This thermal isolation means that a lower temperature solder410, 410′ could be used since this material will not get as hot duringlaser welding 128 when the capacitor is internally grounded. On thedevice side, as shown in FIG. 24, one can see a low-cost ground leadwire118′gnd, which is routed to a circuit board (not shown). This groundwire 118′gnd is optional, but does provide a very convenient way ofproviding an AIMD housing ground 102 for the circuit board electronics.This is important where the AIMD housing 102 can is to be used as anelectrode, perhaps an implantable defibrillator application.

Referring once again to FIG. 24, in comparing it to the prior art, asillustrated in FIGS. 3 and 4, one can see that there are many advantageswhen compared to the prior art of FIGS. 3 and 4. Some of theseadvantages include: 1) elimination of the expensive platinum orpalladium leadwires that extend from the device to the body fluid side,shown as 118 and 118′ in FIG. 3 with replacement of the device sideleadwires with very low cost leadwires, such as tin-copper or insulatedtin-copper; 2) Replacement of the relatively expensive electricalconnection material 146 shown in FIG. 4, which in the prior artgenerally is a thermal-setting conductive polyimide, which makes aconnection between the feedthrough capacitor inside diametermetallization 130 and the through leadwire 118. As shown in FIGS. 3 and4, replacement of material 146 is a very laborious process involvinghand operations by injecting a thermal-setting conductive adhesive witha hand syringe, centrifuging that into place, pre-curing it,micro-blasting away excess material, inspecting and then repeating thatprocess as much as four to five times. In FIG. 24, this has all beenreplaced by one simple solder preform process 410, which makes all therequired joints simultaneously. By replacing the rather lengthyleadwires with the short leadwire 118, one has also designed the deviceof FIG. 24 for robotic assembly (automation). A robot can place theadhesive washer 206 over the leadwire 118 and a robot can also place thefeedthrough capacitor 124. The solder preforms 410 could either bethreaded by robot or by hand or then inserted into the feedthroughcapacitor via holes as shown. Then either a conveyor belt or a batchprocess is used to reflow the solder preform without the need forrepetitive processes. It has been found through experimentation that themanufacturing yield of the product, as illustrated in FIG. 24, is in thehigh 99% range. This is an increase in manufacturing yield of greaterthan 5% compared to the prior art technology illustrated in FIGS. 3 and4. Another important advantage that is not really apparent from FIG. 24is that it is completely and easily reworkable. The most expensivesubcomponent in FIG. 24 is the hermetic seal subassembly 189. It hasgold brazes, which are expensive; sputtering, which is expensive: andalumina insulator, which is expensive. In addition, the ferrule itself122 tends to be very expensive. It is common practice after thesubassembly 116 is formed to do extensive thermal, mechanical andelectrical testing before this subassembly 116 is shipped to a customerfor installation into an AIMD housing 102. This includes elevatedtemperature voltage application otherwise known as burn-in and the like.There is usually some infant mortality in the capacitor population 124,meaning that there is a yield associated with this high reliabilityelectrical and mechanical pre-screening. If the capacitor 124 does failelectrically or fails one of its insulation resistance tests, it iseasily removable by simply heating it up. In other words, all one has todo is reflow the solder preform 410 and then remove the capacitor fromthe insulative washer 206 and simply install a new feedthrough capacitorand reuse the hermetic seal subassembly. This is an enormous advantageof the present invention.

Referring once again to FIG. 3 and the length of device side leadwires118′, one can appreciate why it has never been possible to automate theplacement onto the hermetic seal subassembly 189, the feedthroughcapacitor insulation washer 206 and the feedthrough capacitor 124itself. It is because the device side leadwires are so long that theyare not rigid, and it is literally impossible to keep the tolerance suchthat they will point perfectly straight. On the other hand, referring toFIG. 24, one can see that the relatively short device side leadwire 118are also pointing straight and rigid. Accordingly, one can appreciatethat the assembly of FIG. 24 is readily built by robots and iscompletely designed for automation. It is only the last step, whichinvolves placement of low cost leadwires 118′ that a human hand may berequired

FIG. 24A is one possible schematic diagram of the filtered feedthroughassembly 116 of FIG. 24. Referring to FIG. 24A, one can see that theground pin 118 gnd extends from the body fluid side all the way to thedevice side. One will also appreciate that any number of activeleadwires 118′ are possible from monopolar to bipolar to tripolar . . .all the way to “n” number of active leads. One will also appreciate thatthe telemetry pin T is optional or may even embody a multiplicity of RFtelemetry pins T.

FIG. 24B is almost the same as FIG. 24, except the body fluid sideground lead 118 gnd has been eliminated. In most AIMD applications, itis not necessary to provide an implanted lead conductor that has thesame potential as the AIMD housing 102. Referring once again to FIG.24B, one can see that the gold braze preform 138, 140, 408 has coveredthe top 138 on the body fluid side of the short leadwire 118 gnd.Referring once again to FIG. 24B, one can see that the schematicpreviously described in FIG. 7A could apply. Referring to FIG. 7A, onenotes that the device side ground pin 118 gnd does not extend to thebody fluid side. Again, any number of active pins are possible, and thetelemetry pin is optional.

FIG. 25 illustrates an internally grounded feedthrough capacitor 124 aspreviously described in FIG. 24, except that the gold braze moat 138,140, 408 has been eliminated and instead replaced by internal groundplates 137 that are embedded within a multilayer and co-fired aluminaceramic insulator 188. Sputtering of the adhesion 152 and wetting layers150 electrically connects these embedded ground plates 137 in parallel.Subsequent gold brazing operation 138 electrically connects the ferrule122 by way of this sputtering 150, 152 to the ground plates 137.Embedded ground plates within a hermetic insulator are described by U.S.Pat. No. 7,035,076, the contents of which are incorporated herein byreference. Accordingly, the internally grounded structure illustrated inFIG. 25 has all of the advantages previously described for FIG. 24.

FIG. 26 illustrates the assembly steps for the structure of FIG. 25 in amanner very similar to that previously described in FIG. 9. A majoradvantage is the elimination of the capacitor outside diameter orperimeter metallization and electrical attachment to the ferrule(reference FIG. 8 electrical attachment material 148). Accordingly, FIG.26 is completely designed for automation.

FIG. 26 is the assembly of FIG. 25 showing it exploded into its varioussubcomponents. Shown is the internally grounded hermetic insulatorsubassembly 189 and the internally grounded feedthrough capacitor 124ready to be disposed on top of the adhesive washer 206 and on top of thehermetic seal insulator 188. As previously described, this assembly canbe automated and can be reflowed in a conveyor belt, furnace process orin a bulk process, such as a DAP sealer.

FIG. 27 illustrates the exploded components of FIG. 26 after thecapacitor 124 has been adhesively bonded 206 to the hermetic sealinsulator 189 and ferrule 122. Solder preform 410 is in place and readyto be reflowed. Attention should be drawn to another very importantadvantage of the present invention. This can be seen in FIG. 27 as thediameter or the dimension of a rectangle 125. By elimination of anyelectrical connection between the capacitor outside diameter orperimeter to the ferrule 122, the capacitor 124 can actually be madelarger in diameter or in a rectangular dimension. This adds enormouslyto the capacitor's effective capacitance area (ECA). It should be notedthat this ECA is a square law. For example, if one were to double theoutside diameter or double the length and width, one would multiply theeffective capacitance area by a factor of four. So even a 10% addition,or 20% addition to the capacitor diameter, greatly increases itsvolumetric efficiency.

FIG. 28 is another internally grounded capacitor 124 similar to thosepreviously described in FIG. 24 and FIG. 25. The advantage of FIG. 24 isthat the relatively expensive gold braze moat 138, 140, 408 of FIG. 24has been largely replaced with a metallic piece (conductive clip) 141illustrated isometrically in FIG. 29. This metallic piece 141 wouldtypically be of titanium so that it will readily accept gold brazes 138and 140. The advantage of using a titanium metallic piece 141 is thatless gold is required and of course, gold is very expensive. FIG. 29 isa perspective view of the metallic piece from FIG. 28. It will be notedin FIG. 28 that in the area where the metal piece 141 is located,sputter layers 150 and 152 cover this peninsula area of the hermeticinsulator 188. This means that in actual production that the gold brazelayer 138 would merge with the gold braze layer 140 as a very thin lineof gold above the metal piece 141. This is desirable since it enhancesthe mechanical, structural and hermetic stability of the entire package.It will be understood that this thin layer of gold will typically bepresent, but is not shown for simplicity. It is also likely or evenprobable that the thin layer of gold will partially or totally coverboth the top and bottom of the metal piece 141

FIG. 30 is another internally grounded capacitor version. In this case,the ferrule 122 has been extended into a peninsula 139 as shown. Theferrule 122 would be machined such that, the peninsula 139 is formed.This is best understood by referring back to prior art FIG. 6 where onecan see peninsula 139. The peninsula 139 could be very similar in shape.As previously noted, there could even be multiple peninsulas andmultiple ground leads.

FIG. 31 illustrates a prior art monolithic ceramic capacitor 194. Theseare otherwise known as MLCCs. Monolithic ceramic capacitors are verywell known in the prior art and are produced daily in the hundreds ofmillions. MLCCs are common components in every electronic device,including computers, modern smart phones and the like. It should benoted here that not all rectangular 2-terminal capacitors, asillustrated in FIG. 31, must be ceramic. As used herein, MLCC ormonolithic ceramic capacitors shall also include all kinds of stackedtantalum, stacked film and other dielectric type capacitors that form2-terminal rectangular shapes. It will also be appreciated that any ofthe 2-terminal capacitors in the art, including ceramic, film andtantalum could also have other shapes other than rectangular, includingcylindrical and the like.

FIG. 32 illustrates a cross-section of an MLCC capacitor. As can beseen, the prior art MLCC is a two-terminal device having a metallizationon the left 130 and a metallization on the right 132. It has overlappingelectrodes as illustrated in FIGS. 33 and 34. It has an effectivecapacitance area ECA created by the overlap of the left-hand electrodes134 with the right hand electrodes 136.

FIGS. 35, 35A and 35B illustrate prior art applications of MLCCcapacitors 194 to active implantable medical device applications. Thesepatents include: U.S. Pat. Nos. 5,650,759; 5,896,267; 5,959,829 and5,973,906, the contents of which are incorporated herein by reference.

FIG. 36 describes a hexapolar (6) hermetically sealed filtered terminalin accordance with the present invention. Shown are 6 MLCC capacitors194 a through 194 f that are mounted onto circuit board 147. The circuitboard is best shown in FIG. 37, which is taken from section 37-37 fromFIG. 36.

Referring once again to FIG. 37, one can see the pins 118 a, 118 b and118 c have been pre-welded or pre-brazed or pre-attached bytherma-sonic, ultrasonic or other bonding processes to the device sideleads 118 ′a, 118′b and 118′c. Referring once again to FIG. 37, one cansee that leads 118 d, 118 e and 118 f have not been pre-attached to thedevice side leads and in fact, there is a small gap between them. Afterthe circuit board 147 is disposed adjacent the ferrule or insulator, theelectrical connection 410 is used to connect to device side leadwires118′ into the via hole and also make contact to circuit traces CTa, aspreviously illustrated in FIG. 36. The circuit trace CTa electricallyconnects the leadwires 118, 118′ to the active metallization 130 of therespective MLCC chip capacitors 194. Referring once again to FIG. 37,for leadwires 118 a, 118 b and 118 c, the electrical connection material410 is not shown contacting the gold braze 138 of the hermetic sealinsulator 188. However, a close examination of the electrical connectionmaterial 410 for leadwires 118 d, 118 e and 118 f shows that theelectrical connection material 410, which can be a solder, athermal-setting conductive adhesive or the like, contacts both thedevice side leadwires 118′d, 118 ′e and 118 ′f as well as body fluidside leadwires 118 d, 118 e and 118 f. Importantly, this electricalconnection material 410 for leads 118 d, 118 e and 118 f also directlycontacts the gold braze 138, which provides a very low impedance andoxide-free electrical connection. This is particularly important in thecase where the body fluid side leadwires 118 d, 118 e or 118 f would beof a heavily oxidized material, such as niobium or tantalum or the like.

FIG. 38 is a second sectional view taken from section 38-38 from FIG.36. As best shown in FIG. 37, there are two ground pins (or groundleadwires) 118′gnd that are directly co-brazed 165 into the ferrule 122as shown. One of these ground pins 118′gnd is on the far left of circuitboard 147 and the other is on the far right of the circuit board 147.Embedded within circuit board 147 is a ground circuit trace 161 (alsocalled a ground electrode plate, ground electrode plane, or groundplane). The active hexapolar leadwires on the device side are labeled118′a through 118 ′f. Each one of these are associated with an MLCCcapacitor which acts as an EMI low pass filter 194 or diverter.Referring to MLCC capacitor 194 a in FIG. 36, one can see that on itsground metallization side 132, it is connected to ground via hole 163 b.On the active termination side 130 of MLCC capacitor 194 a, you can seea circuit trace (CTa) and an electrical connection to via hole aboutleadwire pin 118′a. Referring to FIG. 37, one can see the active deviceside pin 118′a running through the via hole of the circuit board 147 andbeing co-gold brazed with the hermetic insulator 188 to the body fluidside leadwire 118 a. This is in accordance with the present invention.Referring once again to FIG. 36, MLCC capacitor 194 a on its groundmetallization side 132, it is connected through a short circuit trace(CTg) or directly through soldering or thermal-setting conductiveadhesives to ground via holes 163 b. Referring to FIG. 38, one can seein cross-section, the grounded via hole 163 b, which is electricallyconnected to the embedded ground plane or ground circuit trace 161within the circuit board 147. It will be appreciated by those in the artthat the ground circuit trace 161 could take on many different shapes ordimensions or even be multilayer. For simplicity, a single layer isshown. It will also be appreciated that the embedded circuit trace 161could also be placed on either the top or the bottom surface or both ofthe circuit board 147. Referring once again to FIG. 37, one could alsosee that the MLCC capacitors 194 are generally surface mounted on top ofthe circuit board 147. It will be appreciated that these MLCC capacitors194 could be partially embedded into the circuit board or totallyembedded within the circuit board in accordance with prior arttechniques.

FIG. 36A is taken generally from section 36A-36A from FIG. 37. Thisshows the top view of the ground plane 161. One can see that on the farleft at 118′gnd and on the right, that this ground plane is grounded tothe ferrule by pins 118′gnd. In general, its connection to the ferrule122 is by co-brazing 165. In accordance with the present invention, itwould be desirable that these pins on the device side be ofnon-oxidizable material, such as palladium or platinum. Other materialsor alloys, such as platinum-iridium or palladium-iridium, can also beused. On the device side, these leadwires 118′ are generally long sothat they can be routed to a distant circuit board 126 having AIMDelectronic circuits. Referring once again to FIG. 36, one can see thesecond MLCC capacitor labeled 194 b. It is connected at its activetermination 130 to via hole 118′b, which is also illustrated in FIG. 37.Referring once again to MLCC capacitor 194 b, its ground termination 132is connected to ground via hole 163 a. Ground via hole 163 a isillustrated in its sectional view in FIG. 36A wherein, it iselectrically connected to ground plane 161. In turn, ground plane 161 iselectrically connected to the left and the right grounded pin 118′gnd.Accordingly, the ground circuit trace or ground plane 161 is at the sameelectrical potential as the ferrule 122. As previously described,ferrule 122 is designed to be laser welded into an AIMD housing 102. TheAIMD housing becomes an overall equipotential surface. Accordingly, AIMDelectronics are protected from electromagnetic interference from thisoverall electromagnetic shield. This protects AIMD electronics from whatis known as direct radiated electromagnetic interference. Another wayelectromagnetic interference can enter into the AIMD housing and disruptthe proper operation of sensitive AIMD circuits is through conductiveinterference. Conductive interference occurs when AIMD leadwires pick upradiated electromagnetic interference and act as antennas and thenconduct that interference through the hermetic seal insulator assembly189 into the interior of the AIMD housing. This is what the MLCCcapacitors 194 are designed to divert at the point of ingress of theelectromagnetic interference. Capacitors 194 divert this undesirableelectromagnetic interference energy away from the active leadwires 118to the ferrule 122 and in turn, to the overall equipotential surface ofthe AIMD housing where the energy is dissipated as a miniscule amount oftemperature rise inside of a body fluid pocket (not shown). Referringback to FIG. 36, one can see that the MLCC capacitors 194 a, 194 b allthe way to 194 f, alternate their active connections back and forthalong with their ground connection, which also alternate as shown inFIG. 36A. It will be appreciated that the hexpolar (6) filter hermeticterminal of FIGS. 36 through 39 can be of any number of terminals,including “n” active terminals, which would embody “n” MLCC capacitors.It will also be appreciated that non-filtered telemetry pins T (notshown) could be added.

Referring once again to FIG. 37, one can see that there is a ground pin118′gnd on both the right- and left-hand sides of circuit board 147.First of all, there can be any number of these ground pins as isrequired to provide a low impedance path across ground plane 161. Inthis case, two were chosen so that each of the active pins 118′a through118′f has a low impedance ground connection thereby providing optimalfiltering attenuation (insertion loss).

These ground pins 118′gnd are also known as metal additions inaccordance with U.S. Patent Publication 2014/0168917, the contents ofwhich are incorporated herein fully by reference. For example, one isreferred to FIG. 36 of the '917 U.S. Patent Publication as showing metaladdition 220.

FIG. 39 is a sectional view generally taken from section 39-39 from FIG.36. This shows an important low-cost alternative to running theleadwires 118′ all the way to AIMD electronic circuits. It needs to beremembered that as illustrated in FIGS. 36 through 38, that theseleadwires 118′ are generally of platinum, palladium or various alloysinvolving iridium. Referring back to FIG. 39, one can see that thedevice side leadwire 118′ can generally be a very low cost leadwirecomprising either solid or stranded copper, tin copper or the like. Asshown, electrical connection material 410 joins the low cost leadwire118′ to the body fluid side leadwire pin 118 a. As can be seen, thedevice side leadwire 118′a is generally butted up close to or adjacent342 the end 337 of the body fluid side leadwire pin 118 a. On theleft-hand side of FIG. 39, one can see the ground pin 118 gnd, which isgold brazed 138 to the ferrule 122. In this case, since the electricalconnection material 410 does not contact the gold braze 138, the groundpin 118 gnd would have to be of a non-oxidized, preferably, solderablematerial, such as platinum or palladium. In the case where a low-costbody fluid side leadwire pin 118′a is used, such as niobium, tantalum,or titanium, then, it would be necessary that the electrical connectionmaterial 410 flow down and contact the gold braze 138, such that a lowresistance and low impedance connection is achieved between body fluidside leadwire 118 a and low cost device side leadwire 118′a. In thiscase, it is not necessary that electrical connection material 410 make adirect electrical connection to the pin 118 a (which would be heavilyoxidized). During the gold braze operation, in general a gold brazepreform 138 would be used. In general, the gold brazing operation of thehermetic seal subassembly 189 is performed in a vacuum furnace at a hightemperature. This gold brazing operation removes any oxide present onpin 118 a and the gold braze preform then makes a very low impedance andlow resistance metallurgical connection to the base metal of pin 118 a.The top surface of this gold braze 138 is therefore of nearly pure gold,which results in an oxide-free surface to which electrical attachmentmaterial 410 can make a very low resistance and low impedance electricalconnection. This is an important feature of the present invention inthat, the body fluid leadwire or pin 118 a can be of very low-costmaterials as contrasted with platinum or palladium. Referring once againto FIG. 39, one can see a feature of FIG. 37 that was not readilyviewable. This is the via hole metallization 175. As shown in FIG. 37,this metallization can be on the inside diameter of a straight via holeor one that is counter-sunk as shown, or counter-bored (not shown). Itwill also be appreciated that in circuit board technology thatmetallization layer 175 could be of an eyelet type construction.Importantly, the via hole metallization 175, 175′ allows the electricalconnection materials 410, such as a solder to wet both to the lead 118′and to the via hole metallization 175 thereby, increasing the shear areaand thereby, increasing pull strength.

Referring once again to FIG. 39, one will note that the ground pin 118gnd gold braze 165 is flush with the top surface TS of the ferrule 122.One will also note that the gold braze 138 around the body fluid sidepin 118 a is also shown flush, this time, flush at the top side ofinsulator 188. This is an idealized drawing in that, during an actualgold braze furnace operation, the gold preform turns to a liquid duringits reflow and has capillary properties.

Referring now to FIG. 39A, one can see that there is a gold brazedmeniscus 165′ and 138′ that are formed as the gold wets and runs up therespective leads 118 gnd and 118 a. The run up of this gold brazemeniscus can be controlled by gold braze furnace conditions, tolerances,the amount of gold in the gold braze preform and the like. However, ingeneral, it is almost always that at least some meniscus forms.Referring once again to FIG. 39A, it is highly desirable that themeniscus 165′ and 138′ form so that the subsequent electrical connectionmaterial 410, which can be a solder or a thermal-setting conductiveadhesive 410, flows down and around the gold braze meniscus portion165′, 138′. This increases the contact surface area to the gold, whichis a non-oxidized surface and also puts the electrical connectionmaterial 410 largely in sheer with the gold braze meniscus 165′, 138′.

It will be appreciated throughout this invention that gold brazes aregenerally shown flush or flat with the top side of either the ferrule orthe insulator, but in general, it will be appreciated that for any ofthe drawings herein, a gold braze meniscus, such as illustrated in FIG.39A, as elements 165′ and 138′ would be more typical.

FIGS. 41A through 48B show a variety of wire-wrapped terminals in bothisometric and side views (for example, FIG. 41A is an isometric view andFIG. 41B is a side view of alternative wire-wrapped pins that couldreplace the pin 131 previously illustrated in FIG. 11). Included indrawings of FIG. 41a through 48B are wire-wrapped pins, pin connectors,crimped pins and the like. In general, referring back to FIGS. 41Athrough 48B, it will be appreciated that the round or cylindricalportion is the portion that is designed to be inserted into thefeedthrough capacitor of FIG. 11. It will also be appreciated that anyof the device side leadwires described in FIGS. 36 through 39 may bereplaced by any of the wire-wrapped pin configurations illustrated inFIGS. 41A through 48B. Referring once again to FIGS. 41A through 48B, itwill be appreciated that all of these are adapted for attachment of alow cost leadwire that would be routed to AIMD electronics (not shown).In general, the pins and connectors illustrated in FIGS. 41A through48B, would generally be of low cost materials, such as drawn copper andthe like, and would generally be plated perhaps with nickel and goldplated or even tin plated. FIGS. 48A and 48B illustrate wire bond pads.In this case, the material might be of Cobar, which is suitable forthermal-sonic or ultrasonic wire bonding. It will be appreciated thatthe wire bond pads of FIGS. 48A and 48B are shown as cylindrical, butthey could be square, rectangular or any other shape.

FIG. 49 is very similar to FIG. 12, except that an eyelet 426 is used inplace of leadwire 118′ and its insulation 123. This eyelet 426 can abutpin 118 as shown on the left side. In both cases, the solder 410 willflow down around both the inside and outside diameters of the eyelet andalso around the outside diameter and end of pin 118 thereby, making avery mechanically strong shear connection. As shown on the right-handside of FIG. 49, the eyelet 426 can overlap pin 118, which would provideeven more strength due to the solder that is in shear between the insidediameter of the eyelet and the outside diameter of pin 118. The eyeletis designed to facilitate convenient wire bonding by a customer. Wirebonding is well known in the art and could involve a round or a flatribbon wire that would be electrically and mechanically connected to thedevice side of the eyelet 426 and then connect to a circuit board orinternal AIMD electronics (not shown).

FIG. 50 is taken generally from section 50-50 of FIG. 49 and illustratesthat the capacitor inside diameter or via hole metallization 130 mayextend onto the device side of the feedthrough capacitor forming awhite-wall tire configuration 411, as previously described in FIG. 12.This would allow solder 410 (or a thermal-setting conductive adhesive)to not only flow down around the inside diameter (or via hole) of thefeedthrough capacitor, but it would also flow all around the eyelet andalso form a solder joint between the bottom surface of the top of theeyelet 426 and the white-wall tire metallization 411. As mentioned inFIG. 12, this would greatly increase the mechanical strength of aconnection between the eyelet 426 and the feedthrough capacitor 124.Importantly, this also provides an even lower electrical resistivitybetween the eyelet and the capacitor metallization, and correspondingactive electrode plates 134. It will be appreciated that the white-walltire structure 411, as illustrated in FIG. 50, could be applied to anyof the feedthrough capacitors previously described herein.

It will be understood to those skilled in the art that brazing materialsthat can be used to practice the present invention will includematerials with a wide range of melting points to facilitate multi-stagebrazing. This technique is used when brazing assemblies comprise severaljoints that cannot be brazed in a single operation. For such assembliesa high-melting alloy is used to make the first joint, and alloys withsuccessively lower melting points are used for subsequent joints.

The primary braze material used for implantable feedthrough assembliesis pure gold (99.99%). In multi-stage brazing, a biocompatible goldalloy braze material may alternately be used to form a braze joint whichhermetically seals the feedthrough into the case. One particular goldalloy braze is one which contains more than 50% gold by weight. Twonon-limiting examples for lower temperature, multi-stage biocompatiblebrazing (<850° C.) include: 82Au-18In (530° C.) and 88Au-12Ge (356° C.).The ductility, oxidation resistance, and wettability of gold and goldalloys of compositions more than 50% gold by weight make these brazes agood choice for creating and sustaining a hermetic seal.

In cases where the risk of direct body fluid contact is negligible,other braze alloys can be used. Among the alloys that could beconsidered are, by weight percent: copper/silver (28/72)—MP 780° C.,indium/copper/silver (10/27/63)—MP 685-730° C., gold/nickel (82/18)—MP950° C., nickel/gold/copper (3/35/62)—MP 1000-1030° C.,gold/nickel/titanium compositions including those disclosed in U.S. Pat.No. 4,938,922, the contents of which are incorporated herein byreference, Johnson Matthey silver-copper eutectic and pure metal brazes,Pallabraze alloys and Orobraze alloys.

The best control of braze volumes is achieved by using die cut brazeperforms. This assures a consistent braze volume for all seals in a lot.However, a braze ring can also be made by cutting loops of wire off of acoil wrapped around a mandrel. The rings created this way usually needto be gently flattened and squeezed to close any cutting gap. A ceramicbody can be joined to the flange or the terminal pin or filled via in anumber of ways, including brazing, active metal brazing,ceramic/glass/metal joining, transient liquid phase bonding, or othersuitable techniques.

Active metal braze materials may also be considered. These materialshave the primary braze material combined by forging or cladding to asmall amount of another metal, usually titanium. It is known that theaddition of titanium to several braze alloy compositions results inincreased reactivity and considerable improvement in wetting behaviorwith a ceramic material. The ceramic is wet by the formation of anintermetallic interfacial reaction product which can then form a jointwith the braze alloy. In active metal brazing, the metal facilitates thebonding mechanism to an unmetallized ceramic surface, thus creating thehermetic seal. Flow characteristics for these alloys are limited sincethe addition of the metal may make them non-eutectic. They also tend toform joints that are more brittle than traditional sputtered seals. Thisdisadvantage becomes less important as the feedthrough size becomessmaller. Active metal brazing would be appropriate where the size of thefeedthrough insulator is too small to allow for traditionalmetallization.

Braze preforms manufactured from nano-gold particles offer yet anotheroption for multi-stage brazing. Particle sizes less than about 5 nmallow melting temperatures of 700° C. or less depending on uniformity ofsize and size distribution. It will be known to one skilled in the artthat the smaller the particle size, the lower the melting temperature.It would also be known to one skilled in the art that meltingtemperatures can be customized based on optimal particle size selection,mixing and preform manufacturing.

If fine gold wire is the desired start material to form braze rings,then melt temperature control is based on wire grain size. The smallerthe grain size, the lower the melt temperature.

The chart shown in FIG. 51 details various solder compositions that maybe used by one skilled in the art when manufacturing the presentinvention. This list is not meant to be a full and complete list, butrather shows some of the solder compositions that could be used with thepresent invention.

Although several embodiments have been described in detail for purposesof illustration, various modifications may be made to each withoutdeparting from the scope and spirit of the invention. Additionally, itis to be understood that any of the features taught herein could beapplied to any of the embodiments taught herein. Accordingly, theinvention is not to be limited, except as by the appended claims.

What is claimed is:
 1. A hermetically sealed filtered feedthrough for anactive implantable medical device (AIMD), the filtered feedthroughcomprising: a) an electrically conductive ferrule comprising a ferrulebody fluid side opposite a ferrule device side and defining a ferruleopening extending to the ferrule body fluid and device sides; b) aninsulator assembly, comprising: i) an insulator comprising an insulatorbody fluid side opposite an insulator device side, the insulator bodyfluid and device sides separated and connected by an insulator outerperimeter surface, wherein the insulator is disposed in the ferruleopening; ii) at least one insulator via hole extending through theinsulator to the insulator body fluid and device sides; iii) an internalmetallization formed on an inner surface of the at least one insulatorvia hole; iv) an electrically conductive first leadwire disposed in theinsulator via hole and extending to a first leadwire first end spacedfrom a first leadwire second end, wherein the first leadwire first endextends outwardly beyond the insulator device side and the firstleadwire second end extends outwardly beyond the insulator body fluidside; v) a first braze contacting the first leadwire and the internalmetallization to thereby form a first hermetic seal in the insulator viahole; and vi) an external metallization disposed on the insulator outerperimeter surface; and c) a second braze hermetically sealing betweenthe insulator external metallization and the ferrule to thereby closethe ferrule opening; d) a circuit board disposed on or adjacent to theinsulator device side, the circuit board comprising a circuit boardpassageway, wherein the first leadwire first end is disposed in thecircuit board passageway; e) an electrically conductive second leadwireextending to a second leadwire first end spaced from a second leadwiresecond end, wherein the second leadwire first end is disposed in thecircuit board passageway and resides at or adjacent to the firstleadwire first end with the first and second leadwires beingelectrically connected together in the circuit board passageway, andwherein the second leadwire second end extends outwardly beyond thecircuit board and is configured to connect to electronic circuits of anAIMD; and f) a chip capacitor disposed on the circuit board, the chipcapacitor comprising: i) at least one active electrode plate interleavedin a capacitive relationship within a capacitor dielectric with at leastone ground electrode plate; and ii) an active metallization electricallyconnected to the at least one active electrode plate, and a groundmetallization electrically connected to the at least one groundelectrode plate, iii) wherein the capacitor active metallization iselectrically connected to the electrically connected first and secondleadwires, and iv) wherein the capacitor ground metallization iselectrically connected to at least one of the ferrule and the secondbraze.
 2. The filtered feedthrough of claim 1, wherein the circuit boardcomprises at least one ground electrode plate disposed on or within thecircuit board, and wherein the at least one circuit board groundelectrode plate is electrically connected to the capacitor groundmetallization and to at least one of the ferrule and the second braze.3. The filtered feedthrough of claim 1, wherein a first electricallyconductive material residing in the circuit board passagewayelectrically connects the first and second leadwires together.
 4. Thefiltered feedthrough of claim 3, wherein the first electricallyconductive material residing in the circuit board passageway directlycontacts and is electrically connected to the first braze.
 5. Thefiltered feedthrough of claim 3, wherein the first electricallyconductive material residing in the circuit board passageway is selectedfrom the group consisting of a solder, a solder BGA, a solder paste, aconductive epoxy, and a conductive polyimide.
 6. The filteredfeedthrough of claim 1, wherein the first and second brazes are goldbrazes.
 7. The filtered feedthrough of claim 1, wherein the firstleadwire is not of the same material as the second leadwire.
 8. Thefiltered feedthrough of claim 1, wherein the first leadwire is selectedfrom the group consisting of platinum, palladium, niobium, tantalum, andalloys thereof, and the second lead wire is copper or tinned copper. 9.The filtered feedthrough of claim 1, wherein the first braze contactingthe first leadwire and the internal metallization in the insulator viahole is disposed at or adjacent to the insulator device side but doesnot extend to the insulator body fluid side.
 10. The filteredfeedthrough of claim 1, wherein the first braze contacting the firstleadwire and the internal metallization in the insulator via hole isdisposed at or adjacent to the insulator device side and extends to theinsulator body fluid side.
 11. The filtered feedthrough of claim 1,wherein the first and second hermetic seals have a leak rate that is nogreater than 1×10−7 std cc He/sec.
 12. The filtered feedthrough of claim1, wherein the external metallization disposed on the insulator outerperimeter surface comprises an adhesion metallization and a wettingmetallization, and wherein the adhesion metallization is disposed on theinsulator outer perimeter surface and the wetting metallization isdisposed on the adhesion metallization.
 13. The filtered feedthrough ofclaim 12, wherein the adhesion metallization or the wettingmetallization comprise at least one of niobium or titanium.
 14. Thefiltered feedthrough of claim 1, wherein the ferrule is configured to bejoined to an opening in an AIMD housing by a laser weld or braze. 15.The filtered feedthrough of claim 1, wherein the ferrule is a continuouspart of an AIMD housing.
 16. The filtered feedthrough of claim 1,including a second electrically conductive material electricallyconnecting the capacitor ground metallization to at least one of theferrule and the second braze.
 17. A hermetically sealed filteredfeedthrough for an active implantable medical device (AIMD), thefiltered feedthrough comprising: a) an electrically conductive ferrulecomprising a ferrule body fluid side opposite a ferrule device side anddefining a ferrule opening extending to the ferrule body fluid anddevice sides, wherein at least one conductive ground pin is electricallyand mechanically connected to the ferrule; b) an insulator assembly,comprising: i) an insulator comprising an insulator body fluid sideopposite an insulator device side, the insulator body fluid and devicesides separated and connected by an insulator outer perimeter surface,wherein the insulator is disposed in the ferrule opening; ii) at leastone insulator via hole extending through the insulator to the insulatorbody fluid and device sides; iii) an internal metallization formed on aninner surface of the at least one insulator via hole; iv) anelectrically conductive first leadwire disposed in the insulator viahole and extending to a first leadwire first end spaced from a firstleadwire second end, wherein the first leadwire first end extendsoutwardly beyond the insulator device side and the first leadwire secondend extends outwardly beyond the insulator body fluid side; v) a firstbraze contacting the first leadwire and the internal metallization tothereby form a first hermetic seal in the insulator via hole; and vi) anexternal metallization disposed on the insulator outer perimetersurface; and c) a second braze hermetically sealing between theinsulator external metallization and the ferrule to thereby close theferrule opening; d) a circuit board disposed on or adjacent to theinsulator device side, the circuit board comprising a circuit boardpassageway, wherein the first leadwire first end is disposed in thecircuit board passageway, and wherein the circuit board comprises atleast one ground electrode plate disposed on or within the circuitboard; e) an electrically conductive second leadwire extending to asecond leadwire first end spaced from a second leadwire second end,wherein the second leadwire first end is disposed in the circuit boardpassageway and resides at or adjacent to the first leadwire first endwith the first and second leadwires being electrically connectedtogether in the circuit board passageway, and wherein the secondleadwire second end extends outwardly beyond the circuit board and isconfigured to connect to electronic circuits of an AIMD; and f) a chipcapacitor disposed on the circuit board, the chip capacitor comprising:i) at least one active electrode plate interleaved in a capacitiverelationship within a capacitor dielectric with at least one groundelectrode plate; and ii) an active metallization electrically connectedto the at least one active electrode plate, and a ground metallizationelectrically connected to the at least one ground electrode plate, iii)wherein the capacitor active metallization is electrically connected tothe electrically connected first and second leadwires, and iv) whereinthe at least one circuit board ground electrode plate is electricallyconnected to the capacitor ground metallization and to the at least oneground pin electrically and mechanically connected to the ferrule. 18.The filtered feedthrough of claim 17, wherein the ground pin iselectrically and mechanically connected to the ferrule by a gold braze.19. A hermetically sealed filtered feedthrough for an active implantablemedical device (AIMD), the filtered feedthrough comprising: a) anelectrically conductive ferrule comprising a ferrule body fluid sideopposite a ferrule device side and defining a ferrule opening extendingto the ferrule body fluid and device sides, wherein an electricallyconductive first ground pin is electrically and mechanically connectedto the ferrule, the first ground pin having a first ground pin first endextending outwardly beyond the ferrule device side; b) an insulatorassembly, comprising: i) an insulator comprising an insulator body fluidside opposite an insulator device side, the insulator body fluid anddevice sides separated and connected by an insulator outer perimetersurface, wherein the insulator is disposed in the ferrule opening; ii)at least one insulator via hole extending through the insulator to theinsulator body fluid and device sides; iii) an internal metallizationformed on an inner surface of the at least one insulator via hole; iv)an electrically conductive first active leadwire disposed in theinsulator via hole and extending to a first active leadwire first endspaced from a first active leadwire second end, wherein the first activeleadwire first end extends outwardly beyond the insulator device sideand the first active leadwire second end extends outwardly beyond theinsulator body fluid side; v) a first braze contacting the first activeleadwire and the internal metallization to thereby form a first hermeticseal in the insulator via hole; and vi) an external metallizationdisposed on the insulator outer perimeter surface; and c) a second brazehermetically sealing between the insulator external metallization andthe ferrule to thereby close the ferrule opening; d) a circuit boarddisposed on or adjacent to the insulator device side, the circuit boardcomprising a circuit board active passageway and a circuit board groundpassageway, wherein at least one circuit board ground electrode plate isdisposed on or within the circuit board, and wherein the first activeleadwire first end is disposed in the circuit board active passageway,and the first ground pin first end is disposed in the circuit boardground passageway; and e) an electrically conductive second activeleadwire extending to a second active leadwire first end spaced from asecond active leadwire second end, wherein the second active leadwirefirst end is disposed in the circuit board active passageway and residesat or adjacent to the first active leadwire first end with the first andsecond active leadwires being electrically connected together in thecircuit board active passageway, and wherein the second active leadwiresecond end extends outwardly beyond the circuit board and is configuredto connect to electronic circuits of an AIMD; f) an electricallyconductive second ground leadwire extending to a second ground leadwirefirst end spaced from a second ground leadwire second end, wherein thesecond ground leadwire first end is disposed in the circuit board groundpassageway electrically connected to the first ground pin first end andto the circuit board ground plate, and the second ground leadwire secondend is configured to connect to electronic circuits of an AIMD; and g) achip capacitor disposed on the circuit board, the chip capacitorcomprising: i) at least one active electrode plate interleaved in acapacitive relationship within a capacitor dielectric with at least oneground electrode plate; and ii) an active metallization electricallyconnected to the at least one active electrode plate, and a groundmetallization electrically connected to the at least one groundelectrode plate, iii) wherein the capacitor active metallization iselectrically connected to the electrically connected first and secondactive leadwires, and iv) wherein the capacitor ground metallization iselectrically connected to the ground electrode plate electricallyconnected to the electrically connected first ground pin and secondground leadwire electrically connected to the ferrule.
 20. The filteredfeedthrough of claim 19, wherein the first ground pin is electricallyand mechanically connected to the ferrule by a gold braze.